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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F04%3A00021214%21RIV08-MSM-14310___
rdf:type
n9:Vysledek skos:Concept
dcterms:description
The objective of the present work was to investigate the influence of thermal annealing on the optical and mechanical properties as well as on the chemical structure of plasma deposited SiOxCyHz films. The films were prepared by PECVD from HMDSO/oxygen mixtures under a wide range of deposition conditions. Their optical and mechanical properties were studied by spectroscopic ellipsometry and depth sensing indentation technique, respectively. The atomic composition was determined by RBS and ERDA measurements. FTIR analysis was used to find the densities of particular chemical bonds in the films. The annealed films exhibited changes of the refractive index and extinction coefficient. The refractive index always decreased with increasing annealing temperature. The observed increase in hardness and elastic modulus after annealing was probably correlated with dehydration of the films and an increase of Si-O-Si bonds with increasing annealing temperature. The objective of the present work was to investigate the influence of thermal annealing on the optical and mechanical properties as well as on the chemical structure of plasma deposited SiOxCyHz films. The films were prepared by PECVD from HMDSO/oxygen mixtures under a wide range of deposition conditions. Their optical and mechanical properties were studied by spectroscopic ellipsometry and depth sensing indentation technique, respectively. The atomic composition was determined by RBS and ERDA measurements. FTIR analysis was used to find the densities of particular chemical bonds in the films. The annealed films exhibited changes of the refractive index and extinction coefficient. The refractive index always decreased with increasing annealing temperature. The observed increase in hardness and elastic modulus after annealing was probably correlated with dehydration of the films and an increase of Si-O-Si bonds with increasing annealing temperature. Strukturální změny vrstev SiOxCyHz připravených v plazmatu indukované zahříváním
dcterms:title
Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing Strukturální změny vrstev SiOxCyHz připravených v plazmatu indukované zahříváním Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing
skos:prefLabel
Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing Strukturální změny vrstev SiOxCyHz připravených v plazmatu indukované zahříváním
skos:notation
RIV/00216224:14310/04:00021214!RIV08-MSM-14310___
n3:strany
C847-C852
n3:aktivita
n14:Z n14:P
n3:aktivity
P(KSK1010104), P(ME 489), P(OC 527.20), Z(MSM 143100003)
n3:cisloPeriodika
54
n3:dodaniDat
n8:2008
n3:domaciTvurceVysledku
n4:4205448 n4:8588627 n4:8259666 n4:5823803 n4:9699414
n3:druhVysledku
n17:J
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n5:predkladatel
n3:idSjednocenehoVysledku
588452
n3:idVysledku
RIV/00216224:14310/04:00021214
n3:jazykVysledku
n16:eng
n3:klicovaSlova
Deposited films; plasma enhanced CVD; HMDSO; FTIR; RBS
n3:klicoveSlovo
n12:RBS n12:Deposited%20films n12:FTIR n12:plasma%20enhanced%20CVD n12:HMDSO
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[EC317A136F04]
n3:nazevZdroje
Czech. J. Phys.
n3:obor
n18:BL
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n10:ME%20489 n10:KSK1010104 n10:OC%20527.20
n3:rokUplatneniVysledku
n8:2004
n3:svazekPeriodika
2004
n3:tvurceVysledku
Franclová, Jana Peřina, Vratislav Kučerová, Zuzana Zajíčková, Lenka Buršíková, Vilma
n3:zamer
n6:MSM%20143100003
s:issn
0011-4626
s:numberOfPages
6
n19:organizacniJednotka
14310