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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F02%3A00006541%21RIV08-MSM-14310___
rdf:type
n12:Vysledek skos:Concept
dcterms:description
We present results of our study of photoluminescence (PL) from multilayer InAs/GaAs quantum dot structures grown by metal organic vapor-phase epitaxy and discuss them in terms of the envelope function approximation. The intensity of the component of the PL signal polarized in the plane parallel to the substrate is substantially higher than that corresponding to the perpendicular polarization. In addition, the former depends on the angle between the electric vector and the direction of elongation of the dots. We present results of our study of photoluminescence (PL) from multilayer InAs/GaAs quantum dot structures grown by metal organic vapor-phase epitaxy and discuss them in terms of the envelope function approximation. The intensity of the component of the PL signal polarized in the plane parallel to the substrate is substantially higher than that corresponding to the perpendicular polarization. In addition, the former depends on the angle between the electric vector and the direction of elongation of the dots. We present results of our study of photoluminescence (PL) from multilayer InAs/GaAs quantum dot structures grown by metal organic vapor-phase epitaxy and discuss them in terms of the envelope function approximation. The intensity of the component of the PL signal polarized in the plane parallel to the substrate is substantially higher than that corresponding to the perpendicular polarization. In addition, the former depends on the angle between the electric vector and the direction of elongation of the dots.
dcterms:title
Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots
skos:prefLabel
Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots
skos:notation
RIV/00216224:14310/02:00006541!RIV08-MSM-14310___
n4:strany
229
n4:aktivita
n14:Z n14:P
n4:aktivity
P(GA102/99/0414), P(GA202/99/1613), Z(AV0Z1010914), Z(MSM 143100002)
n4:cisloPeriodika
2
n4:dodaniDat
n11:2008
n4:domaciTvurceVysledku
n8:1116029 n8:1037749 n8:1834282 n8:3218902
n4:druhVysledku
n17:J
n4:duvernostUdaju
n15:S
n4:entitaPredkladatele
n13:predkladatel
n4:idSjednocenehoVysledku
658723
n4:idVysledku
RIV/00216224:14310/02:00006541
n4:jazykVysledku
n19:eng
n4:klicovaSlova
self-assembled quantum dots; photoluminescence; polarization anisotropy
n4:klicoveSlovo
n6:photoluminescence n6:self-assembled%20quantum%20dots n6:polarization%20anisotropy
n4:kodStatuVydavatele
NL - Nizozemsko
n4:kontrolniKodProRIV
[B3144E7F4B28]
n4:nazevZdroje
Physica E
n4:obor
n10:BM
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
4
n4:projekt
n5:GA202%2F99%2F1613 n5:GA102%2F99%2F0414
n4:rokUplatneniVysledku
n11:2002
n4:svazekPeriodika
13
n4:tvurceVysledku
Humlíček, Josef Munzar, Dominik Lorenc, Michal Navrátil, Karel
n4:zamer
n16:MSM%20143100002 n16:AV0Z1010914
s:issn
1386-9477
s:numberOfPages
4
n18:organizacniJednotka
14310