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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F02%3A00006319%21RIV08-MSM-14310___
rdf:type
n16:Vysledek skos:Concept
dcterms:description
The temperature evolution of the interband electronic response of Si1-xGex alloys is reported and analyzed. Our study of the critical-point structure in the complex dielectric function is based mostly on ellipsometric measurements in the 80-800K range. Several ways of obtaining the critical point parameters are used and discussed. We pay special attention to surface overlayers which are the main obstacle in obtaining true optical response functions from the measured data. The temperature changes of critical point energies, broadening parameters, and phase-shifts are tabulated. We discuss the alloy data with a special emphasis on their relations to the results for both constituents, Si and Ge. The temperature evolution of the interband electronic response of Si1-xGex alloys is reported and analyzed. Our study of the critical-point structure in the complex dielectric function is based mostly on ellipsometric measurements in the 80-800K range. Several ways of obtaining the critical point parameters are used and discussed. We pay special attention to surface overlayers which are the main obstacle in obtaining true optical response functions from the measured data. The temperature changes of critical point energies, broadening parameters, and phase-shifts are tabulated. We discuss the alloy data with a special emphasis on their relations to the results for both constituents, Si and Ge. The temperature evolution of the interband electronic response of Si1-xGex alloys is reported and analyzed. Our study of the critical-point structure in the complex dielectric function is based mostly on ellipsometric measurements in the 80-800K range. Several ways of obtaining the critical point parameters are used and discussed. We pay special attention to surface overlayers which are the main obstacle in obtaining true optical response functions from the measured data. The temperature changes of critical point energies, broadening parameters, and phase-shifts are tabulated. We discuss the alloy data with a special emphasis on their relations to the results for both constituents, Si and Ge.
dcterms:title
Temperature Dependence of the Optical Spectra of SiGe Alloys Temperature Dependence of the Optical Spectra of SiGe Alloys Temperature Dependence of the Optical Spectra of SiGe Alloys
skos:prefLabel
Temperature Dependence of the Optical Spectra of SiGe Alloys Temperature Dependence of the Optical Spectra of SiGe Alloys Temperature Dependence of the Optical Spectra of SiGe Alloys
skos:notation
RIV/00216224:14310/02:00006319!RIV08-MSM-14310___
n3:strany
483
n3:aktivita
n15:Z
n3:aktivity
Z(MSM 143100002)
n3:dodaniDat
n6:2008
n3:domaciTvurceVysledku
n13:1834282
n3:druhVysledku
n17:C
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
666556
n3:idVysledku
RIV/00216224:14310/02:00006319
n3:jazykVysledku
n4:eng
n3:klicovaSlova
Silicon alloys. Germanium alloys.
n3:klicoveSlovo
n19:Silicon%20alloys.%20Germanium%20alloys.
n3:kontrolniKodProRIV
[B64E31EB0FB2]
n3:mistoVydani
New York
n3:nazevEdiceCisloSvazku
Optoelectronic Properties of Semicond. and SL, 15
n3:nazevZdroje
Silicon-Germanium Carbon Alloys
n3:obor
n11:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
2
n3:rokUplatneniVysledku
n6:2002
n3:tvurceVysledku
Humlíček, Josef Garriga, Miquel
n3:zamer
n10:MSM%20143100002
s:numberOfPages
48
n20:hasPublisher
Taylor & Francis
n8:isbn
1-56032-963-7
n9:organizacniJednotka
14310