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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F01%3A00005203%21RIV08-MSM-14310___
rdf:type
skos:Concept n17:Vysledek
dcterms:description
We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces. We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces. We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces.
dcterms:title
X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy
skos:prefLabel
X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy
skos:notation
RIV/00216224:14310/01:00005203!RIV08-MSM-14310___
n3:strany
4836
n3:aktivita
n10:P
n3:aktivity
P(GA202/00/0354), P(VS96102)
n3:cisloPeriodika
9
n3:dodaniDat
n4:2008
n3:domaciTvurceVysledku
n11:9021329 n11:1852558
n3:druhVysledku
n16:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
702347
n3:idVysledku
RIV/00216224:14310/01:00005203
n3:jazykVysledku
n15:eng
n3:klicovaSlova
SI(001) SURFACES; GE ISLANDS; SCATTERING; GROWTH; SUPERLATTICES
n3:klicoveSlovo
n9:SUPERLATTICES n9:SCATTERING n9:SI%28001%29%20SURFACES n9:GROWTH n9:GE%20ISLANDS
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[CF6C7F6026A7]
n3:nazevZdroje
Journal of Applied Physics
n3:obor
n12:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
3
n3:projekt
n6:GA202%2F00%2F0354 n6:VS96102
n3:rokUplatneniVysledku
n4:2001
n3:svazekPeriodika
89
n3:tvurceVysledku
Meduňa, Mojmír Roch, T. Holý, Václav
s:issn
0021-8979
s:numberOfPages
7
n13:organizacniJednotka
14310