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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F00%3A00002318%21RIV08-MSM-14310___
rdf:type
skos:Concept n17:Vysledek
dcterms:description
In this paper the determination of the values of the optical parameters of thin films exhibiting randomly rough boundaries using a photovoltage method is presented. This photovoltage method is based on measuring the radiant flux passing through the film studied. Theoretical formulae needed for applying the method are derived. The practical utilization of the method is illustrated by means of characterizing a rough SiO2-film on a silicon single crystal. A correctness of the results achieved for this film is confirmed by values of the optical parameters of the SiO2-film determined by a combined method of spectroscopic ellipsometry and spectroscopic reflectometry. It will also be shown that the photovoltage method enables us to determine the values of the optical parameters of the rough thin films with the randomly rough boundaries in a simpler way than the standard optical methods. In this paper the determination of the values of the optical parameters of thin films exhibiting randomly rough boundaries using a photovoltage method is presented. This photovoltage method is based on measuring the radiant flux passing through the film studied. Theoretical formulae needed for applying the method are derived. The practical utilization of the method is illustrated by means of characterizing a rough SiO2-film on a silicon single crystal. A correctness of the results achieved for this film is confirmed by values of the optical parameters of the SiO2-film determined by a combined method of spectroscopic ellipsometry and spectroscopic reflectometry. It will also be shown that the photovoltage method enables us to determine the values of the optical parameters of the rough thin films with the randomly rough boundaries in a simpler way than the standard optical methods. In this paper the determination of the values of the optical parameters of thin films exhibiting randomly rough boundaries using a photovoltage method is presented. This photovoltage method is based on measuring the radiant flux passing through the film studied. Theoretical formulae needed for applying the method are derived. The practical utilization of the method is illustrated by means of characterizing a rough SiO2-film on a silicon single crystal. A correctness of the results achieved for this film is confirmed by values of the optical parameters of the SiO2-film determined by a combined method of spectroscopic ellipsometry and spectroscopic reflectometry. It will also be shown that the photovoltage method enables us to determine the values of the optical parameters of the rough thin films with the randomly rough boundaries in a simpler way than the standard optical methods.
dcterms:title
Optical characterization of thin films with randomly rough boundaries using the photovoltage method Optical characterization of thin films with randomly rough boundaries using the photovoltage method Optical characterization of thin films with randomly rough boundaries using the photovoltage method
skos:prefLabel
Optical characterization of thin films with randomly rough boundaries using the photovoltage method Optical characterization of thin films with randomly rough boundaries using the photovoltage method Optical characterization of thin films with randomly rough boundaries using the photovoltage method
skos:notation
RIV/00216224:14310/00:00002318!RIV08-MSM-14310___
n3:strany
43-50
n3:aktivita
n13:P
n3:aktivity
P(GA202/98/0988), P(VS96084)
n3:cisloPeriodika
1
n3:dodaniDat
n6:2008
n3:domaciTvurceVysledku
n7:8885362 n7:9006753 n7:9412921 n7:2026384
n3:druhVysledku
n12:J
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
720597
n3:idVysledku
RIV/00216224:14310/00:00002318
n3:jazykVysledku
n16:eng
n3:klicovaSlova
Photovoltage; Optical properties; Ellipsometry; Reflection spectroscopy
n3:klicoveSlovo
n8:Ellipsometry n8:Photovoltage n8:Optical%20properties n8:Reflection%20spectroscopy
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[576B8ABBDA87]
n3:nazevZdroje
Thin Solid Films
n3:obor
n11:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:projekt
n15:VS96084 n15:GA202%2F98%2F0988
n3:rokUplatneniVysledku
n6:2000
n3:svazekPeriodika
366
n3:tvurceVysledku
Sitter, Helmut Franta, Daniel Ohlídal, Ivan Pavelka, Radek Hlávka, Jan
s:issn
0040-6090
s:numberOfPages
8
n9:organizacniJednotka
14310