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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F14%3A10286604%21RIV15-MSM-11320___
rdf:type
skos:Concept n16:Vysledek
rdfs:seeAlso
http://dx.doi.org/10.1016/j.actamat.2013.12.034
dcterms:description
Hydrogen-induced elastic/plastic deformation was studied in V1-xFex (x = 0.02-0.08) films with thicknesses between 10 and 400 nm and prepared at different temperatures. The combination of several in situ techniques such as X-ray diffraction, acoustic emission, electromotive force and substrate curvature techniques allows sensitive studies of defects generated in these thin films As well as conventional out-of-plane linear elastic film expansion and in-plane compressive stress increase during hydrogen absorption, the investigations uncovered new details: as soon as hydrogen predominately solved in interstitial lattice sites, discrete stress relaxation (DSR) events were detected, after which the film continued to behave in a linear elastic manner. DSRs were interpreted by uncorrelated movement of pre-existing dislocations. Particularly in the case of films deposited at higher temperatures, in-plane tensile stress was found at very small H concentrations of less than 0.005 H/V. Upon further H uptake, this turned into compressive stress. However, this stress increase differed from theoretical predictions. This behavior is explained by the generation of superabundant vacancies. Dislocation emission and plastic deformation are linked to the formation of the hydride phase in the V1-xFex films. Hydrogen-induced elastic/plastic deformation was studied in V1-xFex (x = 0.02-0.08) films with thicknesses between 10 and 400 nm and prepared at different temperatures. The combination of several in situ techniques such as X-ray diffraction, acoustic emission, electromotive force and substrate curvature techniques allows sensitive studies of defects generated in these thin films As well as conventional out-of-plane linear elastic film expansion and in-plane compressive stress increase during hydrogen absorption, the investigations uncovered new details: as soon as hydrogen predominately solved in interstitial lattice sites, discrete stress relaxation (DSR) events were detected, after which the film continued to behave in a linear elastic manner. DSRs were interpreted by uncorrelated movement of pre-existing dislocations. Particularly in the case of films deposited at higher temperatures, in-plane tensile stress was found at very small H concentrations of less than 0.005 H/V. Upon further H uptake, this turned into compressive stress. However, this stress increase differed from theoretical predictions. This behavior is explained by the generation of superabundant vacancies. Dislocation emission and plastic deformation are linked to the formation of the hydride phase in the V1-xFex films.
dcterms:title
Stress release and defect occurrence in V-1_Fe-x(x) films upon hydrogen loading: H-induced superabundant vacancies, movement and creation of dislocations Stress release and defect occurrence in V-1_Fe-x(x) films upon hydrogen loading: H-induced superabundant vacancies, movement and creation of dislocations
skos:prefLabel
Stress release and defect occurrence in V-1_Fe-x(x) films upon hydrogen loading: H-induced superabundant vacancies, movement and creation of dislocations Stress release and defect occurrence in V-1_Fe-x(x) films upon hydrogen loading: H-induced superabundant vacancies, movement and creation of dislocations
skos:notation
RIV/00216208:11320/14:10286604!RIV15-MSM-11320___
n4:aktivita
n13:I n13:P
n4:aktivity
I, P(GBP108/12/G043)
n4:cisloPeriodika
-
n4:dodaniDat
n5:2015
n4:domaciTvurceVysledku
n8:9949097 n8:4554175
n4:druhVysledku
n18:J
n4:duvernostUdaju
n12:S
n4:entitaPredkladatele
n20:predkladatel
n4:idSjednocenehoVysledku
47747
n4:idVysledku
RIV/00216208:11320/14:10286604
n4:jazykVysledku
n17:eng
n4:klicovaSlova
Defects; Thin film; Vanadium; Hydrogen; Acoustic emission
n4:klicoveSlovo
n6:Thin%20film n6:Defects n6:Acoustic%20emission n6:Vanadium n6:Hydrogen
n4:kodStatuVydavatele
US - Spojené státy americké
n4:kontrolniKodProRIV
[D6DF48E6B842]
n4:nazevZdroje
Acta Materialia
n4:obor
n15:BM
n4:pocetDomacichTvurcuVysledku
2
n4:pocetTvurcuVysledku
4
n4:projekt
n19:GBP108%2F12%2FG043
n4:rokUplatneniVysledku
n5:2014
n4:svazekPeriodika
67
n4:tvurceVysledku
Gemma, R. Dobroň, Patrik Čížek, Jakub Pundt, A.
n4:wos
000333495200026
s:issn
1359-6454
s:numberOfPages
16
n14:doi
10.1016/j.actamat.2013.12.034
n11:organizacniJednotka
11320