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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n4http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216208%3A11320%2F14%3A10286201%21RIV15-MSM-11320___/
n10http://localhost/temp/predkladatel/
n11http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n6http://linked.opendata.cz/resource/domain/vavai/projekt/
n20http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
rdfshttp://www.w3.org/2000/01/rdf-schema#
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n17http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n9http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n19http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n8http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n12http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F14%3A10286201%21RIV15-MSM-11320___
rdf:type
skos:Concept n20:Vysledek
rdfs:seeAlso
http://dx.doi.org/10.1063/1.4904472
dcterms:description
The absolute photoluminescence (PL) quantum yield (QY) of multilayers of Silicon nanocrystals (SiNCs) separated by SiO2 barriers were thoroughly studied as function of the barrier thickness, excitation wavelength, and temperature. By mastering the plasma-enhanced chemical vapor deposition growth, we produce a series of samples with the same size-distribution of SiNCs but variable interlayer barrier distance. These samples enable us to clearly demonstrate that the increase of barrier thickness from similar to 1 to larger than 2 nm induces doubling of the PL QY value, which corresponds to the change of number of close neighbors in the hcp structure. The temperature dependence of PL QY suggests that the PL QY changes are due to a thermally activated transport of excitation into non-radiative centers in dark NCs or in the matrix. We estimate that dark NCs represent about 68% of the ensemble of NCs. The PL QY excitation spectra show no significant changes upon changing the barrier thickness and no clear carrier multiplication effects. The dominant effect is the gradual decrease of the PL QY with increasing excitation photon energy. (C) 2014 AIP Publishing LLC. The absolute photoluminescence (PL) quantum yield (QY) of multilayers of Silicon nanocrystals (SiNCs) separated by SiO2 barriers were thoroughly studied as function of the barrier thickness, excitation wavelength, and temperature. By mastering the plasma-enhanced chemical vapor deposition growth, we produce a series of samples with the same size-distribution of SiNCs but variable interlayer barrier distance. These samples enable us to clearly demonstrate that the increase of barrier thickness from similar to 1 to larger than 2 nm induces doubling of the PL QY value, which corresponds to the change of number of close neighbors in the hcp structure. The temperature dependence of PL QY suggests that the PL QY changes are due to a thermally activated transport of excitation into non-radiative centers in dark NCs or in the matrix. We estimate that dark NCs represent about 68% of the ensemble of NCs. The PL QY excitation spectra show no significant changes upon changing the barrier thickness and no clear carrier multiplication effects. The dominant effect is the gradual decrease of the PL QY with increasing excitation photon energy. (C) 2014 AIP Publishing LLC.
dcterms:title
Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals
skos:prefLabel
Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals
skos:notation
RIV/00216208:11320/14:10286201!RIV15-MSM-11320___
n3:aktivita
n8:P
n3:aktivity
P(7E11021)
n3:cisloPeriodika
24
n3:dodaniDat
n12:2015
n3:domaciTvurceVysledku
n11:7725604 Greben, Michael
n3:druhVysledku
n18:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
13737
n3:idVysledku
RIV/00216208:11320/14:10286201
n3:jazykVysledku
n19:eng
n3:klicovaSlova
enhancement; porous silicon; silicon nanocrystals
n3:klicoveSlovo
n9:silicon%20nanocrystals n9:enhancement n9:porous%20silicon
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[86D3466326CD]
n3:nazevZdroje
Applied Physics Letters
n3:obor
n15:BH
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
5
n3:projekt
n6:7E11021
n3:rokUplatneniVysledku
n12:2014
n3:svazekPeriodika
105
n3:tvurceVysledku
Hiller, D. Valenta, Jan Gutsch, S. Greben, Michael Zacharias, M.
n3:wos
000346643600063
s:issn
0003-6951
s:numberOfPages
5
n17:doi
10.1063/1.4904472
n10:organizacniJednotka
11320