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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n17http://localhost/temp/predkladatel/
n19http://linked.opendata.cz/resource/domain/vavai/projekt/
n6http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n20http://linked.opendata.cz/ontology/domain/vavai/
n15http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216208%3A11320%2F14%3A10286163%21RIV15-MSM-11320___/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
rdfshttp://www.w3.org/2000/01/rdf-schema#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n7http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n4http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n18http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n8http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F14%3A10286163%21RIV15-MSM-11320___
rdf:type
skos:Concept n20:Vysledek
rdfs:seeAlso
http://dx.doi.org/10.1063/1.4878699
dcterms:description
Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 degrees C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si3N4. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10(5) times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si3N4 reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si3N4 band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si3N4 interface defect literature. In addition, the role of Si3N4 valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si3N4-embedded Si NCs are suggested. (C) 2014 AIP Publishing LLC. Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 degrees C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si3N4. Despite well defined structural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10(5) times faster time-constants than typical for the indirect band structure of Si NCs. Furthermore, a pure Si3N4 reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si3N4 band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si3N4 interface defect literature. In addition, the role of Si3N4 valence band tail states as potential hole traps is discussed. Most strikingly, the PL peak blueshift with decreasing NC size, which is often observed in literature and typically attributed to quantum confinement (QC), is identified as optical artifact by transfer matrix method simulations of the PL spectra. Finally, criteria for a critical examination of a potential QC-related origin of the PL from Si3N4-embedded Si NCs are suggested. (C) 2014 AIP Publishing LLC.
dcterms:title
Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals
skos:prefLabel
Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals
skos:notation
RIV/00216208:11320/14:10286163!RIV15-MSM-11320___
n3:aktivita
n16:P
n3:aktivity
P(7E11021)
n3:cisloPeriodika
20
n3:dodaniDat
n8:2015
n3:domaciTvurceVysledku
n6:7526857 n6:7725604 n6:7720440 n6:3553760
n3:druhVysledku
n13:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
1349
n3:idVysledku
RIV/00216208:11320/14:10286163
n3:jazykVysledku
n18:eng
n3:klicovaSlova
films; defects; 1st observation; multilayer structures; annealing temperature; (111)si/si3n4 interfaces; optical-properties; chemical-vapor-deposition; nitrogen dangling-bond; amorphous-silicon nitride
n3:klicoveSlovo
n4:nitrogen%20dangling-bond n4:annealing%20temperature n4:%28111%29si%2Fsi3n4%20interfaces n4:multilayer%20structures n4:1st%20observation n4:chemical-vapor-deposition n4:films n4:amorphous-silicon%20nitride n4:defects n4:optical-properties
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[70B71EFFE6F1]
n3:nazevZdroje
Journal of Applied Physics
n3:obor
n14:BH
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
17
n3:projekt
n19:7E11021
n3:rokUplatneniVysledku
n8:2014
n3:svazekPeriodika
115
n3:tvurceVysledku
Gutsch, S. Lopez-Vidrier, J. Hiller, D. Trojánek, František Lopez-Conesa, L. Kořínek, Miroslav Estrade, S. Valenta, Jan Zacharias, M. Peiro, F. Janz, S. Garrido, B. Dyakov, S. A. Zelenina, A. Weiss, C. Schnabel, M. Malý, Petr
n3:wos
000337143500074
s:issn
0021-8979
s:numberOfPages
9
n7:doi
10.1063/1.4878699
n17:organizacniJednotka
11320