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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F14%3A10283093%21RIV15-MSM-11320___
rdf:type
skos:Concept n19:Vysledek
rdfs:seeAlso
http://dx.doi.org/10.1063/1.4893973
dcterms:description
The surface photovoltage method is an important tool for semiconductor characterization. Evaluation of photocarrier diffusion length represents one of the most essential applications of this method. The technique is usually limited to samples with thick neutral bulk and thin space charge region (SCR) at the illuminated surface. The purpose of this paper is to remove these restrictions by introducing a more general model. Two different transport processes for the photogenerated carriers are assumed: drift in the SCR and diffusion in the neutral bulk. It was found that the SCR and the bulk contribute to the overall signal independently even in the case of recombination in the depletion region. The presented surface photovoltage technique was successfully applied to samples of different thickness and with differently thick space charge region at the surface. The diffusion length of the minority carrier in inorganic semiconductors as well as the diffusion length of excitons in organic materials were extracted. The thickness of the space charge region is another important parameter obtained by using the model. The surface photovoltage method is an important tool for semiconductor characterization. Evaluation of photocarrier diffusion length represents one of the most essential applications of this method. The technique is usually limited to samples with thick neutral bulk and thin space charge region (SCR) at the illuminated surface. The purpose of this paper is to remove these restrictions by introducing a more general model. Two different transport processes for the photogenerated carriers are assumed: drift in the SCR and diffusion in the neutral bulk. It was found that the SCR and the bulk contribute to the overall signal independently even in the case of recombination in the depletion region. The presented surface photovoltage technique was successfully applied to samples of different thickness and with differently thick space charge region at the surface. The diffusion length of the minority carrier in inorganic semiconductors as well as the diffusion length of excitons in organic materials were extracted. The thickness of the space charge region is another important parameter obtained by using the model.
dcterms:title
The role of the space charge region in surface photovoltaic effect The role of the space charge region in surface photovoltaic effect
skos:prefLabel
The role of the space charge region in surface photovoltaic effect The role of the space charge region in surface photovoltaic effect
skos:notation
RIV/00216208:11320/14:10283093!RIV15-MSM-11320___
n3:aktivita
n13:I
n3:aktivity
I
n3:cisloPeriodika
8
n3:dodaniDat
n8:2015
n3:domaciTvurceVysledku
n7:6073476 n7:8037353
n3:druhVysledku
n11:J
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
43202
n3:idVysledku
RIV/00216208:11320/14:10283093
n3:jazykVysledku
n17:eng
n3:klicovaSlova
cdte; silicon; solar-cells; exciton diffusion length
n3:klicoveSlovo
n4:cdte n4:exciton%20diffusion%20length n4:solar-cells n4:silicon
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[F2986F198E9D]
n3:nazevZdroje
Journal of Applied Physics
n3:obor
n10:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:rokUplatneniVysledku
n8:2014
n3:svazekPeriodika
116
n3:tvurceVysledku
Toušková, Jana Toušek, Jiří
n3:wos
000342821600035
s:issn
0021-8979
s:numberOfPages
8
n12:doi
10.1063/1.4893973
n18:organizacniJednotka
11320