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Statements

Subject Item

n2:RIV%2F00216208%3A11320%2F14%3A10271597%21RIV15-MSM-11320___

rdf:type

n5:Vysledek skos:Concept

rdfs:seeAlso

http://dx.doi.org/10.1016/j.jcrysgro.2014.02.012

dcterms:description

CePtIn crystallizes in a hexagonal ZrNiAl-type structure and exhibits the properties varying between the magnetically ordered state and valence fluctuating state. The competition between RKKY and Kondo interaction in this compound is most significant among the CeTX family. Moreover, the signs of non Fermi liquid behavior are observed in specific heat and electrical resistivity measurements at low temperatures. Until now all properties have been measured only on polycrystals, often with suspicion of foreign phase in the samples. The preparation of CePtIn single crystal as well as its structure and chemical characterization are presented in detail in this paper. (C) 2014 Elsevier B.V. All rights reserved CePtIn crystallizes in a hexagonal ZrNiAl-type structure and exhibits the properties varying between the magnetically ordered state and valence fluctuating state. The competition between RKKY and Kondo interaction in this compound is most significant among the CeTX family. Moreover, the signs of non Fermi liquid behavior are observed in specific heat and electrical resistivity measurements at low temperatures. Until now all properties have been measured only on polycrystals, often with suspicion of foreign phase in the samples. The preparation of CePtIn single crystal as well as its structure and chemical characterization are presented in detail in this paper. (C) 2014 Elsevier B.V. All rights reserved

dcterms:title

Growth and characterization of CePtIn single crystal Growth and characterization of CePtIn single crystal

skos:prefLabel

Growth and characterization of CePtIn single crystal Growth and characterization of CePtIn single crystal

skos:notation

RIV/00216208:11320/14:10271597!RIV15-MSM-11320___

n3:aktivita

n17:I n17:S n17:P

n3:aktivity

I, P(LM2011025), S

n3:cisloPeriodika

květen

n3:dodaniDat

n12:2015

n3:domaciTvurceVysledku

n10:5009146 n10:1135287 n10:9036962 n10:7047797

n3:druhVysledku

n20:J

n3:duvernostUdaju

n16:S

n3:entitaPredkladatele

n19:predkladatel

n3:idSjednocenehoVysledku

18648

n3:idVysledku

RIV/00216208:11320/14:10271597

n3:jazykVysledku

n6:eng

n3:klicovaSlova

Single crystal growth; Floating zone technique; Czochralski method; X-ray diffraction

n3:klicoveSlovo

n4:Single%20crystal%20growth n4:X-ray%20diffraction n4:Floating%20zone%20technique n4:Czochralski%20method

n3:kodStatuVydavatele

NL - Nizozemsko

n3:kontrolniKodProRIV

[F2CEF974A16B]

n3:nazevZdroje

Journal of Crystal Growth

n3:obor

n14:BM

n3:pocetDomacichTvurcuVysledku

4

n3:pocetTvurcuVysledku

5

n3:projekt

n9:LM2011025

n3:rokUplatneniVysledku

n12:2014

n3:svazekPeriodika

394

n3:tvurceVysledku

Pospíšil, Jiří Rudajevová, Alexandra Hoser, A. Klicpera, Milan Javorský, Pavel

n3:wos

000335907100010

s:issn

0022-0248

s:numberOfPages

6

n8:doi

10.1016/j.jcrysgro.2014.02.012

n13:organizacniJednotka

11320