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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F14%3A10173504%21RIV15-MSM-11320___
rdf:type
skos:Concept n10:Vysledek
rdfs:seeAlso
http://dx.doi.org/10.1016/j.jallcom.2013.09.005
dcterms:description
The structure and morphology of uncapped and capped InGaN quantum dots formed by spinodal decomposition was studied by AFM, SEM, XRD, and EXAFS. As result of the spinodal decomposition, the uncapped samples show a meander structure with low Indium content which is strained to the GaN template, and large, relaxed Indium-rich islands. The thin meander structure is responsible for the quantum dot emission. A subsequently deposited low-temperature GaN cap layer forms small and nearly unstrained islands on top of the meander structure which is a sharp interface between the GaN template and the cap layer. For an InGaN cap layer deposited with similar growth parameters, a similar morphology but lower crystalline quality was observed. After deposition of a second GaN cap at a slightly higher temperature, the surface of the quantum dot structure is smooth. The large In-rich islands observed for the uncapped samples are relaxed, have a relatively low crystalline quality and a broad size distribution. They are still visible after capping with a low-temperature InGaN or GaN cap at 700 degrees C but dissolve after deposition of the second cap layer. The low crystalline quality of the large islands does not influence the quantum dot emission but is expected to increase the number of defects in the cap layer. This might reduce the performance of complex devices based on the stacking of several functional units. The structure and morphology of uncapped and capped InGaN quantum dots formed by spinodal decomposition was studied by AFM, SEM, XRD, and EXAFS. As result of the spinodal decomposition, the uncapped samples show a meander structure with low Indium content which is strained to the GaN template, and large, relaxed Indium-rich islands. The thin meander structure is responsible for the quantum dot emission. A subsequently deposited low-temperature GaN cap layer forms small and nearly unstrained islands on top of the meander structure which is a sharp interface between the GaN template and the cap layer. For an InGaN cap layer deposited with similar growth parameters, a similar morphology but lower crystalline quality was observed. After deposition of a second GaN cap at a slightly higher temperature, the surface of the quantum dot structure is smooth. The large In-rich islands observed for the uncapped samples are relaxed, have a relatively low crystalline quality and a broad size distribution. They are still visible after capping with a low-temperature InGaN or GaN cap at 700 degrees C but dissolve after deposition of the second cap layer. The low crystalline quality of the large islands does not influence the quantum dot emission but is expected to increase the number of defects in the cap layer. This might reduce the performance of complex devices based on the stacking of several functional units.
dcterms:title
Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures
skos:prefLabel
Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures
skos:notation
RIV/00216208:11320/14:10173504!RIV15-MSM-11320___
n5:aktivita
n17:I
n5:aktivity
I
n5:cisloPeriodika
leden
n5:dodaniDat
n18:2015
n5:domaciTvurceVysledku
n15:9021329 n15:4059549
n5:druhVysledku
n13:J
n5:duvernostUdaju
n12:S
n5:entitaPredkladatele
n8:predkladatel
n5:idSjednocenehoVysledku
21296
n5:idVysledku
RIV/00216208:11320/14:10173504
n5:jazykVysledku
n19:eng
n5:klicovaSlova
MOPVE; EXAFS; X-ray diffraction; Quantum dots; InGaN
n5:klicoveSlovo
n9:MOPVE n9:X-ray%20diffraction n9:EXAFS n9:Quantum%20dots n9:InGaN
n5:kodStatuVydavatele
CH - Švýcarská konfederace
n5:kontrolniKodProRIV
[FC103CD87E1D]
n5:nazevZdroje
Journal of Alloys and Compounds
n5:obor
n16:BM
n5:pocetDomacichTvurcuVysledku
2
n5:pocetTvurcuVysledku
21
n5:rokUplatneniVysledku
n18:2014
n5:svazekPeriodika
585
n5:tvurceVysledku
Baumbach, T. Miljevic, B. Krause, B. Kalden, J. Gutowski, J. Aschenbrenner, T. Laurus, T. Piskorska-Hommel, E. Barchuk, Mykhailo Tessarek, C. Tchana, R. Donfeu Falta, J. Sebald, K. Holý, Václav Buth, G. Figge, S. Haenschke, D. Hommel, D. Magalhaes-Paniago, R. Wolska, A. Lazarev, S.
n5:wos
000327492600085
s:issn
0925-8388
s:numberOfPages
8
n4:doi
10.1016/j.jallcom.2013.09.005
n6:organizacniJednotka
11320