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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F13%3A10192057%21RIV14-MSM-11320___
rdf:type
skos:Concept n6:Vysledek
rdfs:seeAlso
http://dx.doi.org/10.1088/0953-8984/25/9/095004
dcterms:description
Epitaxial thin oxide layers were grown by simultaneous aluminum deposition and oxidation on a Co(0001) single crystal, and the metal-oxide interface between the substrate and the grown layer was studied using photoelectron spectroscopy. The oxide layers were composed of two kinds of chemically different layers. Angle-resolved measurements were used to determine the compositions of oxide sub-layers and to reveal their respective thicknesses. The topmost oxide layers were up to 0.23 nm thick, determined by analysis of O 1s and Co 2p(3/2) photoelectron spectra. The results of the analysis show that the interface layer is composed of a mixture of oxygen and cobalt atoms and its thickness is approximately 0.6 nm. The analysis of Co 2p(3/2), Al 2p(3/2) and O 1s core level binding energies confirmed the presence of CoO in the interface layer and Al2O3 in the topmost oxide layer. Epitaxial thin oxide layers were grown by simultaneous aluminum deposition and oxidation on a Co(0001) single crystal, and the metal-oxide interface between the substrate and the grown layer was studied using photoelectron spectroscopy. The oxide layers were composed of two kinds of chemically different layers. Angle-resolved measurements were used to determine the compositions of oxide sub-layers and to reveal their respective thicknesses. The topmost oxide layers were up to 0.23 nm thick, determined by analysis of O 1s and Co 2p(3/2) photoelectron spectra. The results of the analysis show that the interface layer is composed of a mixture of oxygen and cobalt atoms and its thickness is approximately 0.6 nm. The analysis of Co 2p(3/2), Al 2p(3/2) and O 1s core level binding energies confirmed the presence of CoO in the interface layer and Al2O3 in the topmost oxide layer.
dcterms:title
Depth profiling of ultra-thin alumina layers grown on Co(0001) Depth profiling of ultra-thin alumina layers grown on Co(0001)
skos:prefLabel
Depth profiling of ultra-thin alumina layers grown on Co(0001) Depth profiling of ultra-thin alumina layers grown on Co(0001)
skos:notation
RIV/00216208:11320/13:10192057!RIV14-MSM-11320___
n6:predkladatel
n7:orjk%3A11320
n3:aktivita
n15:I n15:P
n3:aktivity
I, P(LD11047), P(LG12003)
n3:cisloPeriodika
9
n3:dodaniDat
n18:2014
n3:domaciTvurceVysledku
n10:8636303 n10:6799809
n3:druhVysledku
n14:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
68429
n3:idVysledku
RIV/00216208:11320/13:10192057
n3:jazykVysledku
n20:eng
n3:klicovaSlova
film growth and epitaxy; Methods of deposition of films and coatings; Oxidation; Composition and phase identification
n3:klicoveSlovo
n11:Methods%20of%20deposition%20of%20films%20and%20coatings n11:film%20growth%20and%20epitaxy n11:Oxidation n11:Composition%20and%20phase%20identification
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[BE4B0AAEFE59]
n3:nazevZdroje
Journal of Physics Condensed Matter
n3:obor
n13:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
5
n3:projekt
n4:LG12003 n4:LD11047
n3:rokUplatneniVysledku
n18:2013
n3:svazekPeriodika
25
n3:tvurceVysledku
Matolín, Vladimír Skála, Tomáš Nemsak, S. Yoshitake, M. Prince, K. C.
n3:wos
000314823600013
s:issn
0953-8984
s:numberOfPages
8
n19:doi
10.1088/0953-8984/25/9/095004
n17:organizacniJednotka
11320