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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F13%3A10173370%21RIV14-MSM-11320___
rdf:type
n11:Vysledek skos:Concept
rdfs:seeAlso
http://dx.doi.org/10.1063/1.4818332
dcterms:description
The influence of boron (B)-doping and remote plasma hydrogen passivation on the photoexcited charge carrier recombination in silicon nanocrystal/SiC multilayers was investigated in detail. The samples were prepared by high temperature annealing of amorphous (intrinsic and B-doped) Si1-xCx/SiC superlattices. The photoluminescence (PL) intensity of samples with B-doped silicon rich carbide layers was found to be up to two orders of magnitude larger and spectrally red shifted in comparison with that of the other samples. Hydrogen passivation leads to an additional increase in PL intensities. The PL decay can be described well by a mono-exponential function with a characteristic decay time of a few microseconds. This behavior agrees well with the picture of localized PL centers (surface states) together with the passivation of non-radiative defects by boron. The samples with B-doped SiC layers exhibit an additional PL band in the green spectral region that is quenched by hydrogen passivation. Its origin is attributed to defects due to suppression of crystallization of amorphous SiC layers as a result of B-doping. Measurement of ultrafast transient transmission allowed us to study the initial (picosecond) carrier dynamics. It was found to be dependent of pump intensity and interpreted in terms of multiparticle electron-hole recombination. (C) 2013 AIP Publishing LLC. The influence of boron (B)-doping and remote plasma hydrogen passivation on the photoexcited charge carrier recombination in silicon nanocrystal/SiC multilayers was investigated in detail. The samples were prepared by high temperature annealing of amorphous (intrinsic and B-doped) Si1-xCx/SiC superlattices. The photoluminescence (PL) intensity of samples with B-doped silicon rich carbide layers was found to be up to two orders of magnitude larger and spectrally red shifted in comparison with that of the other samples. Hydrogen passivation leads to an additional increase in PL intensities. The PL decay can be described well by a mono-exponential function with a characteristic decay time of a few microseconds. This behavior agrees well with the picture of localized PL centers (surface states) together with the passivation of non-radiative defects by boron. The samples with B-doped SiC layers exhibit an additional PL band in the green spectral region that is quenched by hydrogen passivation. Its origin is attributed to defects due to suppression of crystallization of amorphous SiC layers as a result of B-doping. Measurement of ultrafast transient transmission allowed us to study the initial (picosecond) carrier dynamics. It was found to be dependent of pump intensity and interpreted in terms of multiparticle electron-hole recombination. (C) 2013 AIP Publishing LLC.
dcterms:title
Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers
skos:prefLabel
Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers
skos:notation
RIV/00216208:11320/13:10173370!RIV14-MSM-11320___
n11:predkladatel
n21:orjk%3A11320
n3:aktivita
n16:S n16:P
n3:aktivity
P(7E11021), S
n3:cisloPeriodika
7
n3:dodaniDat
n12:2014
n3:domaciTvurceVysledku
n9:7526857 n9:4220684 n9:7720440 n9:4472713 n9:3553760
n3:druhVysledku
n18:J
n3:duvernostUdaju
n13:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
79679
n3:idVysledku
RIV/00216208:11320/13:10173370
n3:jazykVysledku
n19:eng
n3:klicovaSlova
films; photoluminescence; porous-silicon; si nanocrystals; electrical-properties
n3:klicoveSlovo
n7:porous-silicon n7:films n7:photoluminescence n7:electrical-properties n7:si%20nanocrystals
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[F8FD1DC3D923]
n3:nazevZdroje
Journal of Applied Physics
n3:obor
n8:BH
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
10
n3:projekt
n5:7E11021
n3:rokUplatneniVysledku
n12:2013
n3:svazekPeriodika
114
n3:tvurceVysledku
Schnabel, M. Loeper, P. Malý, Petr Janz, S. Summonte, C. Kozák, Martin Trojánek, František Kořínek, Miroslav Salava, Jan Canino, M.
n3:wos
000323510900002
s:issn
0021-8979
s:numberOfPages
5
n20:doi
10.1063/1.4818332
n14:organizacniJednotka
11320