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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F13%3A10145603%21RIV14-MSM-11320___
rdf:type
n6:Vysledek skos:Concept
rdfs:seeAlso
http://dx.doi.org/10.1016/j.jssc.2013.04.026
dcterms:description
Thin films of Ba2Zn2Fe12O22 (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO3(1 1 1) (ST) single crystal substrates using epitaxial SrFe12O19 (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Phi scans reveal perfect parallel in-plane alignment of SrTiO3 substrate and both hexaferrite phases. (C) 2013 Elsevier Inc. All rights reserved. Thin films of Ba2Zn2Fe12O22 (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO3(1 1 1) (ST) single crystal substrates using epitaxial SrFe12O19 (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Phi scans reveal perfect parallel in-plane alignment of SrTiO3 substrate and both hexaferrite phases. (C) 2013 Elsevier Inc. All rights reserved.
dcterms:title
Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition
skos:prefLabel
Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition
skos:notation
RIV/00216208:11320/13:10145603!RIV14-MSM-11320___
n6:predkladatel
n11:orjk%3A11320
n3:aktivita
n8:I
n3:aktivity
I
n3:cisloPeriodika
July
n3:dodaniDat
n17:2014
n3:domaciTvurceVysledku
n18:6715869
n3:druhVysledku
n10:J
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
94636
n3:idVysledku
RIV/00216208:11320/13:10145603
n3:jazykVysledku
n13:eng
n3:klicovaSlova
Epitaxial growth; Thin films; Chemical solution deposition; Y-type hexagonal ferrites
n3:klicoveSlovo
n12:Chemical%20solution%20deposition n12:Y-type%20hexagonal%20ferrites n12:Epitaxial%20growth n12:Thin%20films
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[613CF63B0DC7]
n3:nazevZdroje
Journal of Solid State Chemistry
n3:obor
n9:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
4
n3:rokUplatneniVysledku
n17:2013
n3:svazekPeriodika
203
n3:tvurceVysledku
Drbohlav, I. Buršík, J. Kužel, Radomír Knížek, K.
n3:wos
000325190300016
s:issn
0022-4596
s:numberOfPages
6
n4:doi
10.1016/j.jssc.2013.04.026
n19:organizacniJednotka
11320