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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F13%3A10140017%21RIV14-MSM-11320___
rdf:type
n5:Vysledek skos:Concept
rdfs:seeAlso
http://dx.doi.org/10.1038/srep02220
dcterms:description
Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications. Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.
dcterms:title
Magnetostrictive thin films for microwave spintronics Magnetostrictive thin films for microwave spintronics
skos:prefLabel
Magnetostrictive thin films for microwave spintronics Magnetostrictive thin films for microwave spintronics
skos:notation
RIV/00216208:11320/13:10140017!RIV14-MSM-11320___
n5:predkladatel
n6:orjk%3A11320
n4:aktivita
n18:I
n4:aktivity
I
n4:cisloPeriodika
July
n4:dodaniDat
n7:2014
n4:domaciTvurceVysledku
n13:9021329
n4:druhVysledku
n19:J
n4:duvernostUdaju
n20:S
n4:entitaPredkladatele
n10:predkladatel
n4:idSjednocenehoVysledku
85760
n4:idVysledku
RIV/00216208:11320/13:10140017
n4:jazykVysledku
n12:eng
n4:klicovaSlova
voltage; magnetism; gaas(001); semiconductor
n4:klicoveSlovo
n8:gaas%28001%29 n8:semiconductor n8:magnetism n8:voltage
n4:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n4:kontrolniKodProRIV
[693CDD556F88]
n4:nazevZdroje
Scientific Reports
n4:obor
n15:BM
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
11
n4:rokUplatneniVysledku
n7:2013
n4:svazekPeriodika
3
n4:tvurceVysledku
Parkes, D. E. van der Laan, G. Wang, M. Campion, R. P. Holý, Václav Hindmarch, A. T. Wadley, P. Cavill, S. A. Shelford, L. R. Rushforth, A. W. Edmonds, K. W.
n4:wos
000321890000005
s:issn
2045-2322
s:numberOfPages
6
n9:doi
10.1038/srep02220
n17:organizacniJednotka
11320