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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F12%3A10130689%21RIV13-GA0-11320___
rdf:type
skos:Concept n8:Vysledek
rdfs:seeAlso
http://dx.doi.org/10.1016/j.susc.2011.12.016
dcterms:description
The scanning tunneling microscopy is used to study morphology of a Tl adlayer in various stages of Tl desorption from the Si(111) surface. Transition from the Si(111)/(1 x 1)-Tl structure through the (root 3 x root 3)R30 degrees mosaic phase to domains of metastable Si reconstructions is observed. Silicon substitutional atoms are found to be intrinsic to the (root 3 x root 3)R30 degrees structure. The temperature dependence of the amount of residual TI atoms on the surface is successfully fitted by a model using the first order desorption. The same desorption energy of (2.1 +/- 0.3) eV and frequency prefactor 5 x 10(14 +/- 2) s(-1) during all stages of the desorption are sufficient for the fitting. It is concluded that bonding of Tl in both (1 x 1) and (root 3 x root 3) configurations is of the same nature. The scanning tunneling microscopy is used to study morphology of a Tl adlayer in various stages of Tl desorption from the Si(111) surface. Transition from the Si(111)/(1 x 1)-Tl structure through the (root 3 x root 3)R30 degrees mosaic phase to domains of metastable Si reconstructions is observed. Silicon substitutional atoms are found to be intrinsic to the (root 3 x root 3)R30 degrees structure. The temperature dependence of the amount of residual TI atoms on the surface is successfully fitted by a model using the first order desorption. The same desorption energy of (2.1 +/- 0.3) eV and frequency prefactor 5 x 10(14 +/- 2) s(-1) during all stages of the desorption are sufficient for the fitting. It is concluded that bonding of Tl in both (1 x 1) and (root 3 x root 3) configurations is of the same nature.
dcterms:title
An STM study of desorption-induced thallium structures on the Si(111) surface An STM study of desorption-induced thallium structures on the Si(111) surface
skos:prefLabel
An STM study of desorption-induced thallium structures on the Si(111) surface An STM study of desorption-induced thallium structures on the Si(111) surface
skos:notation
RIV/00216208:11320/12:10130689!RIV13-GA0-11320___
n8:predkladatel
n9:orjk%3A11320
n3:aktivita
n14:P
n3:aktivity
P(GP202/09/P033)
n3:cisloPeriodika
13-14
n3:dodaniDat
n18:2013
n3:domaciTvurceVysledku
n4:7727550 n4:1730886 n4:1934767 n4:2500191 n4:5456347
n3:druhVysledku
n13:J
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
122024
n3:idVysledku
RIV/00216208:11320/12:10130689
n3:jazykVysledku
n6:eng
n3:klicovaSlova
Desorption; Thallium; Si(111); Scanning tunneling microscopy
n3:klicoveSlovo
n7:Scanning%20tunneling%20microscopy n7:Thallium n7:Desorption n7:Si%28111%29
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[4C7D1E1749AF]
n3:nazevZdroje
Surface Science
n3:obor
n19:BM
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n11:GP202%2F09%2FP033
n3:rokUplatneniVysledku
n18:2012
n3:svazekPeriodika
606
n3:tvurceVysledku
Sobotík, Pavel Setvín, Martin Kocán, Pavel Matvija, Peter Ošťádal, Ivan
n3:wos
000304740600003
s:issn
0039-6028
s:numberOfPages
5
n21:doi
10.1016/j.susc.2011.12.016
n20:organizacniJednotka
11320