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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F12%3A10129206%21RIV13-GA0-11320___
rdf:type
n11:Vysledek skos:Concept
rdfs:seeAlso
http://www.scientific.net/DDF.331.113
dcterms:description
Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H-plasma. Defect characterization has been made by two complementary techniques of positron annihilation: positron lifetime spectroscopy and coincidence Doppler broadening. The high-momentum parts of the annihilation photon momentum distribution have been calculated from first principles in order to assist in defect identification. The positron annihilation results are supplemented by Atomic Force Microscopy for characterization of the crystal surface. It was found that virgin ZnO crystal contains Zn-vacancies associated with hydrogen. H-plasma treatment causes a significant reduction in concentration of these complexes. Physical mechanism of this effect is discussed in the paper. Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H-plasma. Defect characterization has been made by two complementary techniques of positron annihilation: positron lifetime spectroscopy and coincidence Doppler broadening. The high-momentum parts of the annihilation photon momentum distribution have been calculated from first principles in order to assist in defect identification. The positron annihilation results are supplemented by Atomic Force Microscopy for characterization of the crystal surface. It was found that virgin ZnO crystal contains Zn-vacancies associated with hydrogen. H-plasma treatment causes a significant reduction in concentration of these complexes. Physical mechanism of this effect is discussed in the paper.
dcterms:title
Characterization of H-plasma treated ZnO crystals by positron annihilation and atomic force microscopy Characterization of H-plasma treated ZnO crystals by positron annihilation and atomic force microscopy
skos:prefLabel
Characterization of H-plasma treated ZnO crystals by positron annihilation and atomic force microscopy Characterization of H-plasma treated ZnO crystals by positron annihilation and atomic force microscopy
skos:notation
RIV/00216208:11320/12:10129206!RIV13-GA0-11320___
n11:predkladatel
n17:orjk%3A11320
n4:aktivita
n5:P n5:Z
n4:aktivity
P(GAP108/11/0958), Z(MSM0021620834)
n4:cisloPeriodika
19.09.2012
n4:dodaniDat
n16:2013
n4:domaciTvurceVysledku
n6:7701934 n6:7037945 n6:9949097
n4:druhVysledku
n7:J
n4:duvernostUdaju
n21:S
n4:entitaPredkladatele
n10:predkladatel
n4:idSjednocenehoVysledku
126816
n4:idVysledku
RIV/00216208:11320/12:10129206
n4:jazykVysledku
n9:eng
n4:klicovaSlova
atomic force microscopy; Zinc oxide: hydrogen: positron annihilation
n4:klicoveSlovo
n19:atomic%20force%20microscopy n19:Zinc%20oxide%3A%20hydrogen%3A%20positron%20annihilation
n4:kodStatuVydavatele
CH - Švýcarská konfederace
n4:kontrolniKodProRIV
[23B10D9480FB]
n4:nazevZdroje
Defect and Diffusion Forum
n4:obor
n18:BM
n4:pocetDomacichTvurcuVysledku
3
n4:pocetTvurcuVysledku
9
n4:projekt
n12:GAP108%2F11%2F0958
n4:rokUplatneniVysledku
n16:2012
n4:svazekPeriodika
331
n4:tvurceVysledku
Čížek, Jakub Kuriplach, Jan Skorupa, W. Grambole, D. Cowan, T. E. Brauer, G. Schmidt, H. Procházka, Ivan Anwand, W.
n4:zamer
n22:MSM0021620834
s:issn
1012-0386
s:numberOfPages
13
n14:doi
10.4028/www.scientific.net/DDF.331.113
n20:organizacniJednotka
11320