This HTML5 document contains 54 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n4http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216208%3A11320%2F12%3A10126345%21RIV13-MSM-11320___/
n5http://localhost/temp/predkladatel/
n20http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n7http://linked.opendata.cz/resource/domain/vavai/subjekt/
n6http://linked.opendata.cz/ontology/domain/vavai/
n16http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
rdfshttp://www.w3.org/2000/01/rdf-schema#
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n15http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n9http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n21http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n19http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n11http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F12%3A10126345%21RIV13-MSM-11320___
rdf:type
skos:Concept n6:Vysledek
rdfs:seeAlso
http://dx.doi.org/10.1088/0957-4484/23/46/465705
dcterms:description
We present investigations on the strain properties of silicon capping layers on top of regular SiGe island arrays, in dependence on the Si-layer thickness. Such island arrays are used as stressors for the active channel in field-effect transistors where the desired tensile strain in the Si channel is a crucial parameter for the performance of the device. The thickness of the Si cap was varied from 0 to 30 nm. The results of high resolution x-ray diffraction experiments served as input to perform detailed strain calculations via finite element method models. Thus, detailed information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain within the Si capping layer strongly depends on its thickness, even if the Ge concentration of the buried dot remains unchanged, with tensile strains degrading if thicker Si layers are used. We present investigations on the strain properties of silicon capping layers on top of regular SiGe island arrays, in dependence on the Si-layer thickness. Such island arrays are used as stressors for the active channel in field-effect transistors where the desired tensile strain in the Si channel is a crucial parameter for the performance of the device. The thickness of the Si cap was varied from 0 to 30 nm. The results of high resolution x-ray diffraction experiments served as input to perform detailed strain calculations via finite element method models. Thus, detailed information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain within the Si capping layer strongly depends on its thickness, even if the Ge concentration of the buried dot remains unchanged, with tensile strains degrading if thicker Si layers are used.
dcterms:title
Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space
skos:prefLabel
Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space
skos:notation
RIV/00216208:11320/12:10126345!RIV13-MSM-11320___
n6:predkladatel
n7:orjk%3A11320
n3:aktivita
n13:Z
n3:aktivity
Z(MSM0021620834)
n3:cisloPeriodika
46
n3:dodaniDat
n11:2013
n3:domaciTvurceVysledku
n20:9021329
n3:druhVysledku
n19:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
171515
n3:idVysledku
RIV/00216208:11320/12:10126345
n3:jazykVysledku
n21:eng
n3:klicovaSlova
silicon; mosfets; transistors; diffraction; shape; mobility; dots; overgrowth temperature
n3:klicoveSlovo
n9:silicon n9:mosfets n9:dots n9:transistors n9:diffraction n9:overgrowth%20temperature n9:mobility n9:shape
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[6A5A0DF9468D]
n3:nazevZdroje
Nanotechnology
n3:obor
n18:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
9
n3:rokUplatneniVysledku
n11:2012
n3:svazekPeriodika
23
n3:tvurceVysledku
Bauer, G. Deiter, C. Hrauda, N. Sueess, M. J. Holý, Václav Stangl, J. Wintersberger, E. Zhang, J. J. Seeck, O. H.
n3:wos
000310460300020
n3:zamer
n16:MSM0021620834
s:issn
0957-4484
s:numberOfPages
10
n15:doi
10.1088/0957-4484/23/46/465705
n5:organizacniJednotka
11320