This HTML5 document contains 47 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n13http://localhost/temp/predkladatel/
n14http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n10http://linked.opendata.cz/resource/domain/vavai/projekt/
n20http://linked.opendata.cz/resource/domain/vavai/subjekt/
n19http://linked.opendata.cz/ontology/domain/vavai/
n12http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n17http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
n21http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216208%3A11320%2F11%3A10109233%21RIV12-AV0-11320___/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n5http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n6http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n15http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n4http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F11%3A10109233%21RIV12-AV0-11320___
rdf:type
skos:Concept n19:Vysledek
dcterms:description
Single silicon nanowires (Si-NWs) prepared by electronbeam lithography and reactive-ion etching are investigated by imaging optical spectroscopy under variable temperatures and laser pumping intensities. Spectral images of individual Si-NWs reveal a large variability of photoluminescence (PL) along a single Si-NW. The weaker broad emission band asymmetrically extended to the high-energy side is interpreted to be due to recombination of quasi-free 1D excitons while the brighter localized emission features (with significantly variable peak position, width, and shape) are due to localization of electron-hole pairs in surface protrusions acting like quasi-0D centers or quantum dots (QDs). Correlated PL and scanning electron microscopy images indicate that the efficiently emitting QDs are located at the Si-NW interface with completely oxidized neck of the initial Si wall. Theoretical fitting of the delocalized PL emission band explains its broad asymmetrical band to be due to the Gaussian size distribution of the Si-NW diameter and reveals also the presence of recombination from the Si-NW excited state which can facilitate a fast capture of excitons into QD centers. Single silicon nanowires (Si-NWs) prepared by electronbeam lithography and reactive-ion etching are investigated by imaging optical spectroscopy under variable temperatures and laser pumping intensities. Spectral images of individual Si-NWs reveal a large variability of photoluminescence (PL) along a single Si-NW. The weaker broad emission band asymmetrically extended to the high-energy side is interpreted to be due to recombination of quasi-free 1D excitons while the brighter localized emission features (with significantly variable peak position, width, and shape) are due to localization of electron-hole pairs in surface protrusions acting like quasi-0D centers or quantum dots (QDs). Correlated PL and scanning electron microscopy images indicate that the efficiently emitting QDs are located at the Si-NW interface with completely oxidized neck of the initial Si wall. Theoretical fitting of the delocalized PL emission band explains its broad asymmetrical band to be due to the Gaussian size distribution of the Si-NW diameter and reveals also the presence of recombination from the Si-NW excited state which can facilitate a fast capture of excitons into QD centers.
dcterms:title
Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires
skos:prefLabel
Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires
skos:notation
RIV/00216208:11320/11:10109233!RIV12-AV0-11320___
n19:predkladatel
n20:orjk%3A11320
n3:aktivita
n9:Z n9:P
n3:aktivity
P(KAN400100701), P(LC510), Z(MSM0021620835)
n3:cisloPeriodika
7
n3:dodaniDat
n4:2012
n3:domaciTvurceVysledku
n14:7725604
n3:druhVysledku
n18:J
n3:duvernostUdaju
n6:S
n3:entitaPredkladatele
n21:predkladatel
n3:idSjednocenehoVysledku
190781
n3:idVysledku
RIV/00216208:11320/11:10109233
n3:jazykVysledku
n15:eng
n3:klicovaSlova
exciton; luminescence; silicon; quantum dot; Nanowire
n3:klicoveSlovo
n5:silicon n5:luminescence n5:quantum%20dot n5:exciton n5:Nanowire
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[3322C567FFD6]
n3:nazevZdroje
Nano Letters
n3:obor
n16:BH
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
3
n3:projekt
n10:LC510 n10:KAN400100701
n3:rokUplatneniVysledku
n4:2011
n3:svazekPeriodika
11
n3:tvurceVysledku
Bruhn, Benjamin Valenta, Jan Linnros, Jan
n3:wos
000292849400075
n3:zamer
n12:MSM0021620835
s:issn
1530-6984
s:numberOfPages
7
n17:doi
10.1021/nl201610g
n13:organizacniJednotka
11320