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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F11%3A10106230%21RIV12-MSM-11320___
rdf:type
n8:Vysledek skos:Concept
rdfs:seeAlso
http://www.scientific.net/SSP.178-179.43
dcterms:description
Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2 used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islands relaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions. Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2 used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islands relaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions.
dcterms:title
Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon
skos:prefLabel
Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon
skos:notation
RIV/00216208:11320/11:10106230!RIV12-MSM-11320___
n8:predkladatel
n19:orjk%3A11320
n3:aktivita
n11:Z
n3:aktivity
Z(MSM0021620834)
n3:cisloPeriodika
2011
n3:dodaniDat
n5:2012
n3:domaciTvurceVysledku
n7:7087136
n3:druhVysledku
n17:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
189997
n3:idVysledku
RIV/00216208:11320/11:10106230
n3:jazykVysledku
n18:eng
n3:klicovaSlova
Silicon; Nano-Structured; Grown; Epitaxially; Germanium; Defects; Structural; Characterization
n3:klicoveSlovo
n10:Silicon n10:Structural n10:Characterization n10:Nano-Structured n10:Germanium n10:Defects n10:Epitaxially n10:Grown
n3:kodStatuVydavatele
CH - Švýcarská konfederace
n3:kontrolniKodProRIV
[9C9A07532DF5]
n3:nazevZdroje
Solid State Phenomena
n3:obor
n6:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
8
n3:rokUplatneniVysledku
n5:2011
n3:svazekPeriodika
178-179
n3:tvurceVysledku
Peter, Zaumseil Yamamoto, Yuji Bauer, Joachim Schroeder, Thomas Matějová, Jana Kozlowski, Grzegorz Schubert, Markus Andreas Tillack, Bernd
n3:zamer
n12:MSM0021620834
s:issn
1012-0394
s:numberOfPages
7
n21:doi
10.4028/www.scientific.net/SSP.178-179.43
n9:organizacniJednotka
11320