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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F11%3A10103802%21RIV12-MSM-11320___
rdf:type
skos:Concept n19:Vysledek
rdfs:seeAlso
http://www.sciencedirect.com/science/article/pii/S0022286010009324
dcterms:description
The silicon-rich oxide (SiO(x)) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 degrees C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizontal tube reactor were varied in order to deposit films with different values of oxygen content x. The roughness of the film surfaces and of the substrate-film interfaces were determined by X-ray specular reflection. A homogeneous surface with the root-mean square (r.m.s.) surface roughness less than 3 nm has been found. Scanning electron microscopy shows surface lateral structures smaller than 50 nm. Infrared absorption shows the broad peak of the TO(3) phonon mode at 1000 cm(-1) which blue shifts with the increase of oxygen content x. The observed absence of the LO(3) phonon mode at 1260 cm(-1) is an another indication of the low surface roughness. The Raman spectra show broad bands of the TA, LA, LO, and TO-like phonon bands typical of amorphous materials. (C) 2010 Elsevier B.V. All rights reserved. The silicon-rich oxide (SiO(x)) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 degrees C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizontal tube reactor were varied in order to deposit films with different values of oxygen content x. The roughness of the film surfaces and of the substrate-film interfaces were determined by X-ray specular reflection. A homogeneous surface with the root-mean square (r.m.s.) surface roughness less than 3 nm has been found. Scanning electron microscopy shows surface lateral structures smaller than 50 nm. Infrared absorption shows the broad peak of the TO(3) phonon mode at 1000 cm(-1) which blue shifts with the increase of oxygen content x. The observed absence of the LO(3) phonon mode at 1260 cm(-1) is an another indication of the low surface roughness. The Raman spectra show broad bands of the TA, LA, LO, and TO-like phonon bands typical of amorphous materials. (C) 2010 Elsevier B.V. All rights reserved.
dcterms:title
Surface characterization of thin silicon-rich oxide films Surface characterization of thin silicon-rich oxide films
skos:prefLabel
Surface characterization of thin silicon-rich oxide films Surface characterization of thin silicon-rich oxide films
skos:notation
RIV/00216208:11320/11:10103802!RIV12-MSM-11320___
n19:predkladatel
n20:orjk%3A11320
n3:aktivita
n4:Z
n3:aktivity
Z(MSM0021620834)
n3:cisloPeriodika
1-3
n3:dodaniDat
n10:2012
n3:domaciTvurceVysledku
n11:9021329
n3:druhVysledku
n7:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
233483
n3:idVysledku
RIV/00216208:11320/11:10103802
n3:jazykVysledku
n12:eng
n3:klicovaSlova
films; oxide; silicon-rich; thin; characterization; Surface
n3:klicoveSlovo
n6:thin n6:silicon-rich n6:films n6:oxide n6:Surface n6:characterization
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[245BEC6210A3]
n3:nazevZdroje
Journal of Molecular Structure
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
13
n3:rokUplatneniVysledku
n10:2011
n3:svazekPeriodika
993
n3:tvurceVysledku
Ferrari, M. Ristic, M. Buljan, M. Ivanda, M. Mazzola, M. Ristic, D. Marcius, M. Righini, GC Chiasera, A. Holý, Václav Furic, K. Music, S. Gamulin, O.
n3:wos
000291066000034
n3:zamer
n9:MSM0021620834
s:issn
0022-2860
s:numberOfPages
5
n14:doi
10.1016/j.molstruc.2010.11.066
n16:organizacniJednotka
11320