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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F11%3A10103797%21RIV12-MSM-11320___
rdf:type
skos:Concept n17:Vysledek
rdfs:seeAlso
http://iopscience.iop.org/0268-1242/26/6/064002
dcterms:description
Theoretical description of x-ray scattering from nanostructures is briefly summarized. The application of x-ray scattering for the investigation of the structure of nanocrystals is demonstrated by two characteristic examples comprising standard small-angle x-ray scattering from nanocrystals in an amorphous matrix and x-ray diffraction from crystalline inclusions in an epitaxial layer. New synchrotron-based x-ray scattering methods are briefly discussed. Theoretical description of x-ray scattering from nanostructures is briefly summarized. The application of x-ray scattering for the investigation of the structure of nanocrystals is demonstrated by two characteristic examples comprising standard small-angle x-ray scattering from nanocrystals in an amorphous matrix and x-ray diffraction from crystalline inclusions in an epitaxial layer. New synchrotron-based x-ray scattering methods are briefly discussed.
dcterms:title
X-ray characterization of semiconductor nanostructures X-ray characterization of semiconductor nanostructures
skos:prefLabel
X-ray characterization of semiconductor nanostructures X-ray characterization of semiconductor nanostructures
skos:notation
RIV/00216208:11320/11:10103797!RIV12-MSM-11320___
n17:predkladatel
n19:orjk%3A11320
n3:aktivita
n15:Z
n3:aktivity
Z(MSM0021620834)
n3:cisloPeriodika
6
n3:dodaniDat
n14:2012
n3:domaciTvurceVysledku
n4:9021329
n3:druhVysledku
n12:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n20:predkladatel
n3:idSjednocenehoVysledku
241980
n3:idVysledku
RIV/00216208:11320/11:10103797
n3:jazykVysledku
n21:eng
n3:klicovaSlova
nanostructures; semiconductor; characterization; X-ray
n3:klicoveSlovo
n13:semiconductor n13:characterization n13:nanostructures n13:X-ray
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[92BECA8877EC]
n3:nazevZdroje
Semiconductor Science and Technology
n3:obor
n8:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
3
n3:rokUplatneniVysledku
n14:2011
n3:svazekPeriodika
26
n3:tvurceVysledku
Holý, Václav Buljan, M. Lechner, RT
n3:wos
000289279300003
n3:zamer
n18:MSM0021620834
s:issn
0268-1242
s:numberOfPages
7
n6:doi
10.1088/0268-1242/26/6/064002
n7:organizacniJednotka
11320