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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F11%3A10103778%21RIV12-MSM-11320___
rdf:type
skos:Concept n9:Vysledek
rdfs:seeAlso
http://prb.aps.org/abstract/PRB/v84/i9/e094113
dcterms:description
Diffuse x-ray scattering from various types of stacking faults in basal (0001) planes in a-oriented wurtzite GaN epitaxial layers is described theoretically and the calculated intensity distributions are compared with experimental data. From the comparison, the densities of stacking faults in a series of a-GaN samples were determined. The method makes it possible to discriminate the diffuse scattering from stacking faults from the influence of nonplanar defects like dislocations. Diffuse x-ray scattering from various types of stacking faults in basal (0001) planes in a-oriented wurtzite GaN epitaxial layers is described theoretically and the calculated intensity distributions are compared with experimental data. From the comparison, the densities of stacking faults in a series of a-GaN samples were determined. The method makes it possible to discriminate the diffuse scattering from stacking faults from the influence of nonplanar defects like dislocations.
dcterms:title
Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxiallayers Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxiallayers
skos:prefLabel
Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxiallayers Diffuse x-ray scattering from stacking faults in a-plane GaN epitaxiallayers
skos:notation
RIV/00216208:11320/11:10103778!RIV12-MSM-11320___
n9:predkladatel
n10:orjk%3A11320
n6:aktivita
n17:Z n17:S
n6:aktivity
S, Z(MSM0021620834)
n6:cisloPeriodika
9
n6:dodaniDat
n19:2012
n6:domaciTvurceVysledku
n13:4059549 n13:9021329
n6:druhVysledku
n18:J
n6:duvernostUdaju
n16:S
n6:entitaPredkladatele
n11:predkladatel
n6:idSjednocenehoVysledku
194607
n6:idVysledku
RIV/00216208:11320/11:10103778
n6:jazykVysledku
n8:eng
n6:klicovaSlova
epitaxiallayers; GaN; a-plane; faults; stacking; scattering; x-ray; Diffuse
n6:klicoveSlovo
n12:x-ray n12:Diffuse n12:GaN n12:stacking n12:faults n12:scattering n12:epitaxiallayers n12:a-plane
n6:kodStatuVydavatele
US - Spojené státy americké
n6:kontrolniKodProRIV
[1D7C6FDE3A85]
n6:nazevZdroje
Physical Review B - Condensed Matter and Materials Physics
n6:obor
n15:BM
n6:pocetDomacichTvurcuVysledku
2
n6:pocetTvurcuVysledku
6
n6:rokUplatneniVysledku
n19:2011
n6:svazekPeriodika
84
n6:tvurceVysledku
Holý, Václav Barchuk, Mykhailo Schwaiger, S. Stangl, J. Kriegner, D. Scholz, F.
n6:wos
000295161900001
n6:zamer
n21:MSM0021620834
s:issn
1098-0121
s:numberOfPages
8
n14:doi
10.1103/PhysRevB.84.094113
n4:organizacniJednotka
11320