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Statements

Subject Item
n2:RIV%2F00216208%3A11320%2F10%3A10061913%21RIV11-MSM-11320___
rdf:type
n14:Vysledek skos:Concept
dcterms:description
Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of electronics applications. Here, we show that in contrast to expectation, the conductivity of graphene increases with increasing concentration of vacancy defects, by more than one order of magnitude. We obtain a pronounced enhancement of the conductivity after insertion of defects by both quantum mechanical transport calculations as well as experimental studies of carbon nano-sheets. Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of electronics applications. Here, we show that in contrast to expectation, the conductivity of graphene increases with increasing concentration of vacancy defects, by more than one order of magnitude. We obtain a pronounced enhancement of the conductivity after insertion of defects by both quantum mechanical transport calculations as well as experimental studies of carbon nano-sheets.
dcterms:title
Conductivity engineering of graphene by defect formation Conductivity engineering of graphene by defect formation
skos:prefLabel
Conductivity engineering of graphene by defect formation Conductivity engineering of graphene by defect formation
skos:notation
RIV/00216208:11320/10:10061913!RIV11-MSM-11320___
n3:aktivita
n12:P n12:Z
n3:aktivity
P(KAN400100653), Z(MSM0021620834)
n3:cisloPeriodika
4
n3:dodaniDat
n19:2011
n3:domaciTvurceVysledku
n10:2563231
n3:druhVysledku
n4:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
251816
n3:idVysledku
RIV/00216208:11320/10:10061913
n3:jazykVysledku
n5:eng
n3:klicovaSlova
formation; defect; graphene; engineering; Conductivity
n3:klicoveSlovo
n7:engineering n7:graphene n7:Conductivity n7:defect n7:formation
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[8C081735BF77]
n3:nazevZdroje
Journal of Physics D - Applied Physics
n3:obor
n6:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
13
n3:projekt
n11:KAN400100653
n3:rokUplatneniVysledku
n19:2010
n3:svazekPeriodika
43
n3:tvurceVysledku
Grennberg, H. Holloway, B. C. Leifer, K. Sanyal, B. Blom, T. Karis, O. Jansson, J U. Fransson, J. Jafri, S.H.M. Quinlan, R. A. Widenkvist, E. Eriksson, O. Carva, Karel
n3:wos
000273551300016
n3:zamer
n8:MSM0021620834
s:issn
0022-3727
s:numberOfPages
8
n18:organizacniJednotka
11320