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Statements

Subject Item
n2:RIV%2F00177016%3A_____%2F04%3A%230000332%21RIV11-GA0-00177016
rdf:type
n6:Vysledek skos:Concept
dcterms:description
We have determined the important statistical quantities of the rough boundary between a GaAs single crystal and its oxide film formed by thermal oxidation. Thermal oxidation of the GaAs surfaces was performed at the temperature of 500 degreesC. Using mathematical procedures developed for treating AFM data consisting of a family of the values of the heights of the irregularities of this roughness the values of the important statistical quantities of roughness were determined for 11 samples of the GaAs surfaces created by dissolution of the thermal oxide films originated during thermal oxidation of the smooth GaAs samples (the times of oxidation of these 11 samples were within interval of 20 min-8 hours). From the AFM analysis of the roughness of GaAs surfaces it was found that the roughnening of these surfaces was the most pronounced for shorter oxidation times, i.e. for times smaller than about 2 hours. We have determined the important statistical quantities of the rough boundary between a GaAs single crystal and its oxide film formed by thermal oxidation. Thermal oxidation of the GaAs surfaces was performed at the temperature of 500 degreesC. Using mathematical procedures developed for treating AFM data consisting of a family of the values of the heights of the irregularities of this roughness the values of the important statistical quantities of roughness were determined for 11 samples of the GaAs surfaces created by dissolution of the thermal oxide films originated during thermal oxidation of the smooth GaAs samples (the times of oxidation of these 11 samples were within interval of 20 min-8 hours). From the AFM analysis of the roughness of GaAs surfaces it was found that the roughnening of these surfaces was the most pronounced for shorter oxidation times, i.e. for times smaller than about 2 hours.
dcterms:title
Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation
skos:prefLabel
Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation
skos:notation
RIV/00177016:_____/04:#0000332!RIV11-GA0-00177016
n3:aktivita
n12:Z n12:P
n3:aktivity
P(GA101/01/1104), P(GA202/01/1110), Z(MSM 143100002)
n3:cisloPeriodika
3
n3:dodaniDat
n14:2011
n3:domaciTvurceVysledku
n18:2260387
n3:druhVysledku
n15:J
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
555567
n3:idVysledku
RIV/00177016:_____/04:#0000332
n3:jazykVysledku
n17:eng
n3:klicovaSlova
THIN-FILMS
n3:klicoveSlovo
n11:THIN-FILMS
n3:kodStatuVydavatele
AT - Rakouská republika
n3:kontrolniKodProRIV
[0C7EC993B6BC]
n3:nazevZdroje
Microchimica Acta
n3:obor
n13:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
3
n3:projekt
n8:GA101%2F01%2F1104 n8:GA202%2F01%2F1110
n3:rokUplatneniVysledku
n14:2004
n3:svazekPeriodika
147
n3:tvurceVysledku
Klapetek, Petr Ohlídal, Ivan Navrátil, Karel
n3:zamer
n10:MSM%20143100002
s:issn
0026-3672
s:numberOfPages
6