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About: MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany)     Permalink

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