About: 3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance

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Description	3D detectors, with electrodes penetrating the entire silicon wafer and active edges, were fabricated at the Stanford Nano Fabrication Facility (SNF), California, USA, with different electrode configurations. After irradiation with neutrons up to a fluence of 8.8 x 10(15) n(eq)cm(-2), they were characterised using an infrared laser tuned to inject similar to 2 minimum ionising particles showing signal efficiencies as high as 66% for the configuration with the shortest (56 mu m) inter-electrode spacing. Sensors from the same wafer were also bump-bonded to the ATLAS FE-13 pixel readout chip and their noise characterised. Most probable signal-to-noise ratios were calculated before and after irradiation to be as good as 38:1 after the highest irradiation level with a substrate thickness of 210 mu m. These devices are promising candidates for application at the LHC such as the very forward detectors at ATLAS and CMS, the ATLAS B-Layer replacement and the general pixel upgrade. 3D detectors, with electrodes penetrating the entire silicon wafer and active edges, were fabricated at the Stanford Nano Fabrication Facility (SNF), California, USA, with different electrode configurations. After irradiation with neutrons up to a fluence of 8.8 x 10(15) n(eq)cm(-2), they were characterised using an infrared laser tuned to inject similar to 2 minimum ionising particles showing signal efficiencies as high as 66% for the configuration with the shortest (56 mu m) inter-electrode spacing. Sensors from the same wafer were also bump-bonded to the ATLAS FE-13 pixel readout chip and their noise characterised. Most probable signal-to-noise ratios were calculated before and after irradiation to be as good as 38:1 after the highest irradiation level with a substrate thickness of 210 mu m. These devices are promising candidates for application at the LHC such as the very forward detectors at ATLAS and CMS, the ATLAS B-Layer replacement and the general pixel upgrade. (en)
Title	3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance 3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance (en)
skos:prefLabel	3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance 3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance (en)
skos:notation	RIV/68407700:21670/09:00165980!RIV10-MSM-21670___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(LA08015)
http://linked.open...iv/cisloPeriodika	604
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Slavíček, Tomáš Pospíšil, Stanislav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Ústav technické a experimentální fyziky ČVUT
http://linked.open...dnocenehoVysledku	353893
http://linked.open...ai/riv/idVysledku	RIV/68407700:21670/09:00165980
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductor detectors; radiation damage (en)
http://linked.open.../riv/klicoveSlovo	radiation damage semiconductor detectors
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[A47FF191C408]
http://linked.open...i/riv/nazevZdroje	Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
http://linked.open...in/vavai/riv/obor	BG
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	13 (xsd:int)
http://linked.open...vavai/riv/projekt	Collaboration of the Czech Republic with CERN
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	2009
http://linked.open...iv/tvurceVysledku	Pospíšil, Stanislav Slavíček, Tomáš
http://linked.open...ain/vavai/riv/wos	000267198700011
issn	0168-9002
number of pages	7 (xsd:int)
http://localhost/t...ganizacniJednotka	21670
is http://linked.open...avai/riv/vysledek of	3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance 3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance 3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance 3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance

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