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Description
| - We study effects of low temperature hydrogen plasma treatment (200 – 300 °C) done in two different microwave plasma reactors (linear and focused plasma) on functionality of diamond solution-gated field-effect transistors (FET) covered with various encapsulation (ma-P, OFPR, SU8, Si3N4) and with proteins adsorbed on the gate. Three-dimensional transistor microstructures (20 μm) are made of nanocrystalline hydrogen terminated intrinsic diamond that is grown on Si/SiO2 substrates by selective seeding and microwave plasma CVD growth. The hydrogen-plasma treatment in linear plasma system at 200 °C removes the proteins from the gate as evidenced by atomic force microscopy, keeps the FET fully operational, and renews solution-gated FET sensitivity to protein adsorption (unlike rinsing in solutions) as evidenced by reproducible shift of transfer characteristics by -30 mV.
- We study effects of low temperature hydrogen plasma treatment (200 – 300 °C) done in two different microwave plasma reactors (linear and focused plasma) on functionality of diamond solution-gated field-effect transistors (FET) covered with various encapsulation (ma-P, OFPR, SU8, Si3N4) and with proteins adsorbed on the gate. Three-dimensional transistor microstructures (20 μm) are made of nanocrystalline hydrogen terminated intrinsic diamond that is grown on Si/SiO2 substrates by selective seeding and microwave plasma CVD growth. The hydrogen-plasma treatment in linear plasma system at 200 °C removes the proteins from the gate as evidenced by atomic force microscopy, keeps the FET fully operational, and renews solution-gated FET sensitivity to protein adsorption (unlike rinsing in solutions) as evidenced by reproducible shift of transfer characteristics by -30 mV. (en)
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Title
| - Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma
- Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma (en)
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skos:prefLabel
| - Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma
- Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma (en)
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skos:notation
| - RIV/68407700:21340/13:00211850!RIV14-MSM-21340___
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - I, P(GAP108/12/0996), P(GBP108/12/G108), P(GD202/09/H041), S
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68407700:21340/13:00211850
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Nanocrystalline Diamond; Solution-gated Field-effect Transistor; Low Temperature Hydrogen Termination; Proteins; Encapsulation (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - International Journal of Electrochemical Science
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Kromka, A.
- Neykova, Neda
- Rezek, B.
- Krátká, M.
- Ukraintsev, E.
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http://linked.open...ain/vavai/riv/wos
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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