About: Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Není k dispozici (cs) A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HF. The p–i–n diodes have an active layer (20–60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si : H and a top-layer of p+ doped silicon, the substrate being of n+ Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growths with the square of applied bias. A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HF. The p–i–n diodes have an active layer (20–60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si : H and a top-layer of p+ doped silicon, the substrate being of n+ Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growths with the square of applied bias. (en)
Title	Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure Není k dispozici (cs) Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure (en)
skos:prefLabel	Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure Není k dispozici (cs) Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure (en)
skos:notation	RIV/68407700:21340/06:04126689!RIV07-AV0-21340___
http://linked.open.../vavai/riv/strany	775;777
http://linked.open...avai/riv/aktivita	P S
http://linked.open...avai/riv/aktivity	P(KAN400670651), S
http://linked.open...iv/cisloPeriodika	0
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Fojtík, Anton
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta jaderná a fyzikálně inženýrská
http://linked.open...dnocenehoVysledku	473784
http://linked.open...ai/riv/idVysledku	RIV/68407700:21340/06:04126689
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	electroluminescence; pin diode; quantum dot; quantum nanostructure; silicon nanocrystal (en)
http://linked.open.../riv/klicoveSlovo	electroluminescence silicon nanocrystal quantum dot pin diode quantum nanostructure
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[B6F2D76D4AF7]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Study of interfaces between metal nanoparticles and InP for gas sensing and radiations detection
http://linked.open...UplatneniVysledku	2006
http://linked.open...v/svazekPeriodika	515
http://linked.open...iv/tvurceVysledku	Valenta, J. Stuchlík, J. Fojtík, Anton Kočka, J. Pelant, I. Stuchlíková, T. H.
issn	0040-6090
number of pages	3 (xsd:int)
http://localhost/t...ganizacniJednotka	21340
is http://linked.open...avai/riv/vysledek of	Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure

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