The presented model describes the avalanche build-up for the initial number of photoelectrons m in the range of interest 1-1000. The model is in a good agreement with experimental results on a silicon based single photon avalanche detector and it will be verified on another semiconductors.
The presented model describes the avalanche build-up for the initial number of photoelectrons m in the range of interest 1-1000. The model is in a good agreement with experimental results on a silicon based single photon avalanche detector and it will be verified on another semiconductors. (en)