About: High-Power Silicon P-i-N Diode with Cathode Shorts: The Impact of Electron Irradiation

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.elsevier.com/locate/microrel
Description	Large-area silicon P–i–N diodes (VRRM = 4.5 kV) were processed with cathode shorts in order to conserve the softness under reverse recovery, while employing a 10% thinner silicon wafer for a better technology curve for the static and dynamic losses. Contrarily to existing designs, the cathode shorts have approximately one order of magnitude higher surface concentration of the P+ layer than the N+ emitter. Except for the implanted N-type buffer, these shorts were processed using the dopant deposition from POCl3 and H3BO3. The diodes with and without cathode shorts have been compared for the static parameters. The dynamic behavior has been also compared at reverse recovery of a free-wheeling diode in a standard IGCT circuit. The impact of electron irradiation on the softness of the reverse recovery has been evaluated up to 125 degC. Large-area silicon P–i–N diodes (VRRM = 4.5 kV) were processed with cathode shorts in order to conserve the softness under reverse recovery, while employing a 10% thinner silicon wafer for a better technology curve for the static and dynamic losses. Contrarily to existing designs, the cathode shorts have approximately one order of magnitude higher surface concentration of the P+ layer than the N+ emitter. Except for the implanted N-type buffer, these shorts were processed using the dopant deposition from POCl3 and H3BO3. The diodes with and without cathode shorts have been compared for the static parameters. The dynamic behavior has been also compared at reverse recovery of a free-wheeling diode in a standard IGCT circuit. The impact of electron irradiation on the softness of the reverse recovery has been evaluated up to 125 degC. (en)
Title	High-Power Silicon P-i-N Diode with Cathode Shorts: The Impact of Electron Irradiation High-Power Silicon P-i-N Diode with Cathode Shorts: The Impact of Electron Irradiation (en)
skos:prefLabel	High-Power Silicon P-i-N Diode with Cathode Shorts: The Impact of Electron Irradiation High-Power Silicon P-i-N Diode with Cathode Shorts: The Impact of Electron Irradiation (en)
skos:notation	RIV/68407700:21230/13:00205090!RIV14-MSM-21230___
http://linked.open...avai/predkladatel	Fakulta elektrotechnická
http://linked.open...avai/riv/aktivita	N
http://linked.open...avai/riv/aktivity	N
http://linked.open...iv/cisloPeriodika	5
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Pína, Libor
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta elektrotechnická
http://linked.open...dnocenehoVysledku	77420
http://linked.open...ai/riv/idVysledku	RIV/68407700:21230/13:00205090
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Silicon; fast recovery diode; electron irradiation (en)
http://linked.open.../riv/klicoveSlovo	Silicon electron irradiation fast recovery diode
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[66BF90AFC13E]
http://linked.open...i/riv/nazevZdroje	Microelectronics Reliability
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	53
http://linked.open...iv/tvurceVysledku	Vobecký, Jan Pína, Libor
http://linked.open...ain/vavai/riv/wos	000318838400005
issn	0026-2714
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.microrel.2013.02.008
http://localhost/t...ganizacniJednotka	21230

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