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Description
  • Graphene is very interesting new material and promises attractive application in future nanodevices. It is 2D carbon structure with very interesting physical behavior. Graphene is nearly transparent material which has higher carrier mobility than any other material at room temperature. So graphene can be used in application such as ultrahigh-speed transistors and transparent electrodes. In this paper we present our first experiments of transport behavior of graphene at room temperature. We measured resistivity of prepared Hall-bar samples depending on gate voltage (back gated graphene). Hysteresis between forward and backward sweep direction was observed.
  • Graphene is very interesting new material and promises attractive application in future nanodevices. It is 2D carbon structure with very interesting physical behavior. Graphene is nearly transparent material which has higher carrier mobility than any other material at room temperature. So graphene can be used in application such as ultrahigh-speed transistors and transparent electrodes. In this paper we present our first experiments of transport behavior of graphene at room temperature. We measured resistivity of prepared Hall-bar samples depending on gate voltage (back gated graphene). Hysteresis between forward and backward sweep direction was observed. (en)
Title
  • Gated Graphene Electrical Transport Characterization
  • Gated Graphene Electrical Transport Characterization (en)
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  • Gated Graphene Electrical Transport Characterization
  • Gated Graphene Electrical Transport Characterization (en)
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  • RIV/68407700:21230/12:00200396!RIV13-MSM-21230___
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  • 137738
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  • RIV/68407700:21230/12:00200396
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  • graphene; transport, hysteresis (en)
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  • [91B523EC845D]
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  • Prague
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  • Praha
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  • POSTER 2012 - 16th International Student Conference on Electrical Engineering
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  • Janoušek, Michal
  • Šobáň, Zbyněk
  • Náhlík, Josef
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number of pages
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  • České vysoké učení technické v Praze
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  • 978-80-01-05043-9
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  • 21230
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