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  • The effect of ion irradiation on electrical characteristics of SiC Schottky barrier power diodes was investigated. Diodes were irradiated from the anode side with 550 keV protons or 1.9 MeV alphas to place radiation defect maximum into the low doped epitaxial layer which formed the N-base of the diode. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and their influence on diode static and dynamic characteristics was evaluated. Results show that low fluences of both proton and alpha particle irradiation have a negligible effect on dynamic and blocking characteristics of SiC power diodes. However, in contrast with silicon devices, the ON-state resistance of SiC diodes increases significantly already at very low fluences. This negative effect is given by high introduction rates of radiation defects in SiC due to the suppressed annihilation of primary damage.
  • The effect of ion irradiation on electrical characteristics of SiC Schottky barrier power diodes was investigated. Diodes were irradiated from the anode side with 550 keV protons or 1.9 MeV alphas to place radiation defect maximum into the low doped epitaxial layer which formed the N-base of the diode. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and their influence on diode static and dynamic characteristics was evaluated. Results show that low fluences of both proton and alpha particle irradiation have a negligible effect on dynamic and blocking characteristics of SiC power diodes. However, in contrast with silicon devices, the ON-state resistance of SiC diodes increases significantly already at very low fluences. This negative effect is given by high introduction rates of radiation defects in SiC due to the suppressed annihilation of primary damage. (en)
Title
  • Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes
  • Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes (en)
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  • Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes
  • Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes (en)
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  • RIV/68407700:21230/12:00199063!RIV13-GA0-21230___
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  • P(GAP102/12/2108)
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  • 133108
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  • RIV/68407700:21230/12:00199063
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  • silicon carbide; power diodes; ion irradiation; deep levels (en)
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  • [5A7CF69D22C2]
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  • Hazdra, Pavel
  • Vobecký, Jan
  • Záhlava, Vít
  • Berthou, M.
  • Mihaila, A.
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  • České vysoké učení technické v Praze
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  • 978-80-01-05100-9
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  • 21230
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