About: Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We report on a piezoelectric response investigation of AlGaN/GaN circular high electron mobility transistor (C-HEMT) based ring gate capacitor as a new stress sensor device to be potentially applied for dynamic high-pressure sensing. A ring gate capacitor of C-HEMT with an additional ZnO gate interfacial layer was used to measure the changes in the piezoelectric charge induced directly by the variation of piezoelectric polarization of both gate piezoelectric layers (AlGaN, ZnO) for harmonic loading at different excitation frequences. Our experimental results show that about 10 nm thick piezoelectric ZnO layer grown on ring gate/AlGaN interface of C-HEMT can yield almost a 60% increase in the piezoelectric detection sensitivity of the device due to its higher piezoelectric coefficient. We report on a piezoelectric response investigation of AlGaN/GaN circular high electron mobility transistor (C-HEMT) based ring gate capacitor as a new stress sensor device to be potentially applied for dynamic high-pressure sensing. A ring gate capacitor of C-HEMT with an additional ZnO gate interfacial layer was used to measure the changes in the piezoelectric charge induced directly by the variation of piezoelectric polarization of both gate piezoelectric layers (AlGaN, ZnO) for harmonic loading at different excitation frequences. Our experimental results show that about 10 nm thick piezoelectric ZnO layer grown on ring gate/AlGaN interface of C-HEMT can yield almost a 60% increase in the piezoelectric detection sensitivity of the device due to its higher piezoelectric coefficient. (en)
Title	Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor (en)
skos:prefLabel	Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor (en)
skos:notation	RIV/68407700:21230/11:00186056!RIV12-MV0-21230___
http://linked.open...avai/predkladatel	Fakulta elektrotechnická
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GA102/09/1601), P(VG20102015015)
http://linked.open...iv/cisloPeriodika	172
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Jakovenko, Jiří
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta elektrotechnická
http://linked.open...dnocenehoVysledku	203750
http://linked.open...ai/riv/idVysledku	RIV/68407700:21230/11:00186056
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	AlGaN/GaN; Circular-HEMT; Dynamical stress; Piezoelectric response; SiC; Stress sensor; ZnO (en)
http://linked.open.../riv/klicoveSlovo	Stress sensor ZnO AlGaN/GaN Circular-HEMT Dynamical stress Piezoelectric response SiC
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[B5DDA85D60CC]
http://linked.open...i/riv/nazevZdroje	Sensors and Actuators
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	10 (xsd:int)
http://linked.open...vavai/riv/projekt	Intelligent micro and nano structures for microsensors realized with support of nanotechnology Miniature intelligent system for analyzing concentrations of gases and pollutants, particularly toxic
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	2011
http://linked.open...iv/tvurceVysledku	Držík, M. Husák, Miroslav Vanko, G. Brunco, J. Haščík, S. Jakovenko, Jiří Kutiš, V. Lalinsky, T. Rýger, I. Vallo, M.
http://linked.open...ain/vavai/riv/wos	000300026600005
issn	0924-4247
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.sna.2011.09.028
http://localhost/t...ganizacniJednotka	21230
is http://linked.open...avai/riv/vysledek of	Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

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