About: Perfect Tunneling in Semiconductor Heterostructures     Goto   Sponge   NotDistinct   Permalink

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  • We study the phenomenon of perfect tunneling (tunneling with unitary transmittance) in a 1D semiconductor heterostructure using a formal analogy of the electromagnetic wave equation and the Schrodinger equation. The Kane model of a semiconductor is used and it is shown that this phenomenon can indeed exist, resembling all the interesting features of the corresponding phenomenon in classical electromagnetism in which metamaterials are involved.
  • We study the phenomenon of perfect tunneling (tunneling with unitary transmittance) in a 1D semiconductor heterostructure using a formal analogy of the electromagnetic wave equation and the Schrodinger equation. The Kane model of a semiconductor is used and it is shown that this phenomenon can indeed exist, resembling all the interesting features of the corresponding phenomenon in classical electromagnetism in which metamaterials are involved. (en)
Title
  • Perfect Tunneling in Semiconductor Heterostructures
  • Perfect Tunneling in Semiconductor Heterostructures (en)
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  • Perfect Tunneling in Semiconductor Heterostructures
  • Perfect Tunneling in Semiconductor Heterostructures (en)
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  • RIV/68407700:21230/11:00184644!RIV12-MSM-21230___
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  • P(GA102/09/0314), S
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  • 219896
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  • RIV/68407700:21230/11:00184644
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  • Perfect tunnelling; Semiconductor heterostructure; HgCdTe alloy; Metamaterials; Kane model (en)
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  • [3CEE34CA5C4F]
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  • Barcelona
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  • Louvain-la-Neuve
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  • Proceedings of Metamaterials´ 2011: The Fifth International Congress on Advanced Electromagnetic Materials in Microwaves and Optics
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  • Baena, J. D.
  • Jelínek, Lukáš
  • Marques, R.
  • Voves, Jan
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  • UCL, Laboratoire d´Hyperfréquences
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  • 978-952-67611-0-7
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  • 21230
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