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  • Our contribution takes a step towards the transfer of the well proven plasma enchased chemical vapour deposition (PE CVD) method into the atmospheric pressure region and discusses possible application of DBD sustaining in argon with admixture of hexamethyldisiloxane (HMDSO) and oxygen for deposition of SiOx thin films. Films were deposited on polystyrene substrates. The relations between thin film parameters and deposition process conditions were studied. Our research focused on influence of surface morphology and chemical composition in dependence on working parameters. We concentrated on connection between concentration of the organosilicon reagent transported by the argon flow into the discharge region, concentration of the oxygen in the discharge atmosphere and surface properties of SiOx thin films.
  • Our contribution takes a step towards the transfer of the well proven plasma enchased chemical vapour deposition (PE CVD) method into the atmospheric pressure region and discusses possible application of DBD sustaining in argon with admixture of hexamethyldisiloxane (HMDSO) and oxygen for deposition of SiOx thin films. Films were deposited on polystyrene substrates. The relations between thin film parameters and deposition process conditions were studied. Our research focused on influence of surface morphology and chemical composition in dependence on working parameters. We concentrated on connection between concentration of the organosilicon reagent transported by the argon flow into the discharge region, concentration of the oxygen in the discharge atmosphere and surface properties of SiOx thin films. (en)
Title
  • Study of thin SiOx film deposition by DBD at the atmospheric pressure
  • Study of thin SiOx film deposition by DBD at the atmospheric pressure (en)
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  • Study of thin SiOx film deposition by DBD at the atmospheric pressure
  • Study of thin SiOx film deposition by DBD at the atmospheric pressure (en)
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  • RIV/68407700:21230/11:00180976!RIV12-MSM-21230___
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  • 233153
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  • RIV/68407700:21230/11:00180976
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  • Plasma enhanced chemical vapour deposition; silicon dioxide; atmospheric plasma deposition; dielectric barrier discharge (en)
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  • CZ - Česká republika
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  • [8603FB6EF231]
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  • Acta Technica ČSAV
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  • 56
http://linked.open...iv/tvurceVysledku
  • Píchal, Jan
  • Klenko, Juliya
issn
  • 0001-7043
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  • 21230
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