About: Molybdenum and low-temperature annealing of a silicon power P-i-N diode     Goto   Sponge   NotDistinct   Permalink

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Description
  • High-power P+P-N-N+ diodes (VRRM = 2.5 kV, IFAV = 150 A) with sputtered Mo layer at anode were annealed in the range 550-800 C with and without the presence of radiation defects from helium implantation (10 MeV, 1 1012 cm2). The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements. The diffusion of Mo from the 50 nm thick surface layer was not registered even after 4 h between 550 and 800 C in a rough vacuum.
  • High-power P+P-N-N+ diodes (VRRM = 2.5 kV, IFAV = 150 A) with sputtered Mo layer at anode were annealed in the range 550-800 C with and without the presence of radiation defects from helium implantation (10 MeV, 1 1012 cm2). The devices were characterized using DLTS, spreading resistance, OCVD lifetime, leakage current, forward voltage drop and reverse recovery measurements. The diffusion of Mo from the 50 nm thick surface layer was not registered even after 4 h between 550 and 800 C in a rough vacuum. (en)
Title
  • Molybdenum and low-temperature annealing of a silicon power P-i-N diode
  • Molybdenum and low-temperature annealing of a silicon power P-i-N diode (en)
skos:prefLabel
  • Molybdenum and low-temperature annealing of a silicon power P-i-N diode
  • Molybdenum and low-temperature annealing of a silicon power P-i-N diode (en)
skos:notation
  • RIV/68407700:21230/11:00177777!RIV12-MSM-21230___
http://linked.open...avai/predkladatel
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM6840770017)
http://linked.open...iv/cisloPeriodika
  • 3
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 213533
http://linked.open...ai/riv/idVysledku
  • RIV/68407700:21230/11:00177777
http://linked.open...riv/jazykVysledku
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  • silicon; power diode; molybdenum; helium; diffusion (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [64EF9A08522D]
http://linked.open...i/riv/nazevZdroje
  • Microelectronics Reliability
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http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 51
http://linked.open...iv/tvurceVysledku
  • Vobecký, Jan
  • Komarnitskyy, Volodymyr
  • Záhlava, Vít
http://linked.open...ain/vavai/riv/wos
  • 000288578200009
http://linked.open...n/vavai/riv/zamer
issn
  • 0026-2714
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.microrel.2010.09.021
http://localhost/t...ganizacniJednotka
  • 21230
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