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  • The combination of emitter control with local lifetime tailoring is experimentally analysed in fast recovery high-power diodes. For this purpose, the carrier lifetime and excess carrier oncentration profiles are measured in both unirradiated and helium irradiated diodes. Employing the experimental lifetime profiles as input parameters, the SRH model parameters of device simulator are calibrated. Excellent agreement between the simulation and experimental results is obtained.
  • The combination of emitter control with local lifetime tailoring is experimentally analysed in fast recovery high-power diodes. For this purpose, the carrier lifetime and excess carrier oncentration profiles are measured in both unirradiated and helium irradiated diodes. Employing the experimental lifetime profiles as input parameters, the SRH model parameters of device simulator are calibrated. Excellent agreement between the simulation and experimental results is obtained. (en)
Title
  • Free Carrier Absorption Investigations on Ion Irradiated Fast Recovery Diodes
  • Free Carrier Absorption Investigations on Ion Irradiated Fast Recovery Diodes (en)
skos:prefLabel
  • Free Carrier Absorption Investigations on Ion Irradiated Fast Recovery Diodes
  • Free Carrier Absorption Investigations on Ion Irradiated Fast Recovery Diodes (en)
skos:notation
  • RIV/68407700:21230/10:00168750!RIV11-MSM-21230___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM6840770017)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...dnocenehoVysledku
  • 259786
http://linked.open...ai/riv/idVysledku
  • RIV/68407700:21230/10:00168750
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  • diode; silicon; power devices (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [3790932BBF3A]
http://linked.open...v/mistoKonaniAkce
  • Hiroshima
http://linked.open...i/riv/mistoVydani
  • Piscataway
http://linked.open...i/riv/nazevZdroje
  • Proceedings of the 22nd International Symposium on Power Semiconductor Devices & ICs
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http://linked.open...UplatneniVysledku
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  • Vobecký, Jan
  • Jorda, X.
  • Vellvehi, M.
  • Perpina, X. P.
  • Millan, J. M.
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • IEEE
https://schema.org/isbn
  • 978-4-88686-069-9
http://localhost/t...ganizacniJednotka
  • 21230
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