The deep-lying donor layers created by proton implantation and subsequent isochronal annealing were investigated in silicon substrates with different oxygen concentration.
The deep-lying donor layers created by proton implantation and subsequent isochronal annealing were investigated in silicon substrates with different oxygen concentration. (en)
Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon
Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon (en)
Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon
Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon (en)