About: Synthesis of novel defects in silicon by ion irradiation for future application in semiconductor technology: low-temperature formation of deep donor layers     Goto   Sponge   NotDistinct   Permalink

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  • The paper deals with synthesis of novel defects in silicon by ion irradiation for future application in semiconductor technology: low-temperature formation of deep donor layers.
  • The paper deals with synthesis of novel defects in silicon by ion irradiation for future application in semiconductor technology: low-temperature formation of deep donor layers. (en)
Title
  • Synthesis of novel defects in silicon by ion irradiation for future application in semiconductor technology: low-temperature formation of deep donor layers
  • Synthesis of novel defects in silicon by ion irradiation for future application in semiconductor technology: low-temperature formation of deep donor layers (en)
skos:prefLabel
  • Synthesis of novel defects in silicon by ion irradiation for future application in semiconductor technology: low-temperature formation of deep donor layers
  • Synthesis of novel defects in silicon by ion irradiation for future application in semiconductor technology: low-temperature formation of deep donor layers (en)
skos:notation
  • RIV/68407700:21230/09:00155778!RIV10-MSM-21230___
http://linked.open...avai/riv/aktivita
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  • P(GP102/08/P488), P(LC06041)
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  • 345113
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  • RIV/68407700:21230/09:00155778
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  • ion irradiation; silicon (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [2B70A7AC40A0]
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  • Praha
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  • Praha
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  • Workshop 09
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  • Hazdra, Pavel
  • Komarnitskyy, Volodymyr
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
http://purl.org/ne...btex#hasPublisher
  • České vysoké učení technické v Praze
https://schema.org/isbn
  • 978-80-01-04286-1
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  • 21230
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