About: Controlled Punch Through (CPT) IGBT

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	A new Controlled Punch Through buffer for next generation IGBTs. The advanced shaping of the buffer profile was presented at 1200V IGBT with thickness close to 100um, but is applicable with advantage for all low voltage IGBT classes. A new Controlled Punch Through buffer for next generation IGBTs. The advanced shaping of the buffer profile was presented at 1200V IGBT with thickness close to 100um, but is applicable with advantage for all low voltage IGBT classes. (en) Byla vyvinuta technologie bufferu pro pristi generace IGBT. Prezentovano na IGBT s Vbr = 1200V na substratu tloustky kolem 100um. (cs)
Title	Controlled Punch Through (CPT) IGBT CPT IGBT (cs) Controlled Punch Through (CPT) IGBT (en)
skos:prefLabel	Controlled Punch Through (CPT) IGBT CPT IGBT (cs) Controlled Punch Through (CPT) IGBT (en)
skos:notation	RIV/68407700:21230/08:03152002!RIV09-MSM-21230___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(LC06041)
http://linked.open...vai/riv/dodaniDat	2009
http://linked.open...aciTvurceVysledku	Vobecký, Jan
http://linked.open.../riv/druhVysledku	Z/B - Ověřená technologie
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...onomickeParametry	>10 Mil. CZK
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta elektrotechnická
http://linked.open...dnocenehoVysledku	361273
http://linked.open...ai/riv/idVysledku	RIV/68407700:21230/08:03152002
http://linked.open...terniIdentifikace	LC06041
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open...vai/riv/kategorie	A - Do 5 mil. Kč
http://linked.open.../riv/klicovaSlova	IGBT; Ion Implantation; Silicon; Thin Wafer (en)
http://linked.open.../riv/klicoveSlovo	Ion Implantation Silicon IGBT Thin Wafer
http://linked.open...ontrolniKodProRIV	[D18D5E3EE1F0]
http://linked.open.../licencniPoplatek	A - Poskytovatel licence na výsledek požaduje licenční poplatek
http://linked.open...okalizaceVysledku	Fabrikstrasse 3, CH 5600 Lenzburg, Switzerland
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Preparation, modification and characterization of materials by energetic radiation.
http://linked.open...UplatneniVysledku	2008
http://linked.open...echnickeParametry	Buffer pro blokovaci napeti 600 - 6500V
http://linked.open...iv/tvurceVysledku	Vobecký, Jan Kopta, A. K. Linder, S. L. Rahimo, M. R.
http://linked.open...avai/riv/vlastnik	ABB, Semiconductors
http://linked.open...itiJinymSubjektem	A - Nabytí licence je nutné vždy
http://localhost/t...ganizacniJednotka	21230
is http://linked.open...avai/riv/vysledek of	Controlled Punch Through (CPT) IGBT Controlled Punch Through (CPT) IGBT Controlled Punch Through (CPT) IGBT Controlled Punch Through (CPT) IGBT

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