About: Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The paper report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary 50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission at 1530 nm due to the Er3+ intra-4f 4I13/2 -> 4I15/2 transition was observed by using excitation of semiconductor lasers operating at 980 nm. The paper report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary 50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission at 1530 nm due to the Er3+ intra-4f 4I13/2 -> 4I15/2 transition was observed by using excitation of semiconductor lasers operating at 980 nm. (en) Článek popisuje vlastnosti vrstev GaN s dotací Er3+ a Er3+ + Yb3+ iontů vyrobených pomocí magnetonového naprašování. (cs)
Title	Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement Studium vlastností vrstev GaN s dotací Er3+ a Er3+ + Yb3+ iontů pomocí měření transmisních spekter (cs) Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement (en)
skos:prefLabel	Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement Studium vlastností vrstev GaN s dotací Er3+ a Er3+ + Yb3+ iontů pomocí měření transmisních spekter (cs) Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement (en)
skos:notation	RIV/68407700:21230/08:03148580!RIV09-MSM-21230___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/06/0424), Z(MSM6840770014)
http://linked.open...vai/riv/dodaniDat	2009
http://linked.open...aciTvurceVysledku	Prajzler, Václav
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	České vysoké učení technické v Praze / Fakulta elektrotechnická
http://linked.open...dnocenehoVysledku	373240
http://linked.open...ai/riv/idVysledku	RIV/68407700:21230/08:03148580
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Erbium, Ytterbium; Gallium nitride; Transmittance, Photoluminescence (en)
http://linked.open.../riv/klicoveSlovo	Photoluminescence Transmittance Erbium Gallium nitride Ytterbium
http://linked.open...ontrolniKodProRIV	[A51BA6D47877]
http://linked.open...v/mistoKonaniAkce	Praha
http://linked.open...i/riv/mistoVydani	Bellingham
http://linked.open...i/riv/nazevZdroje	Proceedings of SPIE Photonics, Devices, and Systems IV - Volume 7138
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	New components of the integrated optics made by the planar hybrid technology
http://linked.open...UplatneniVysledku	2008
http://linked.open...iv/tvurceVysledku	Jeřábek, Vítězslav Prajzler, Václav Oswald, Jiří Peřina, V. Špirková, Jarmila Hüttel, Ivan
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2008-08-27 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Výzkum perspektivních informačních a komunikačních technologií
issn	0277-786X
number of pages	6 (xsd:int)
http://purl.org/ne...btex#hasPublisher	SPIE
http://localhost/t...ganizacniJednotka	21230
is http://linked.open...avai/riv/vysledek of	Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement Investigation Properties of GaN Layers Doped with Er3+ and Er3++Yb3+ Ions Using the Transmittance Measurement

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