The paper deals with the study of radiation defects and thermal donors introduced in silicon by hydrogen and helium implantation and subsequent annealing. Introduction and thermal stability of introduced deep and shallow levels was investigated by means of DLTS and CV measurement.
The paper deals with the study of radiation defects and thermal donors introduced in silicon by hydrogen and helium implantation and subsequent annealing. Introduction and thermal stability of introduced deep and shallow levels was investigated by means of DLTS and CV measurement. (en)