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| rdf:type
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| Description
| - Silicon based MicroElectroMechanical Systems are now well understood and widely used in various integrated micromachined microsensors and microactuators. In relation to this, gallium arsenide (GaAs) offers a number of material-related properties and technological advantages over Si. These include well know properties, such as direct band gap transition and high electron mobility. A very important feature of GaAs is the possibility of forming compatible ternary and quaternary compounds by alloying. Using GaAs as a substrate material, formation of AlxGa1-xAs is especially attractive, since their lattice constants are nearly equal, and aluminum and gallium atoms are easily substituted in the lattice without causing too much strain in the film. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility two-dimensional carrier gases, resonant tunneling, and fractional quantum Hall effect, have been found in the GaAs heterostructure system
- Silicon based MicroElectroMechanical Systems are now well understood and widely used in various integrated micromachined microsensors and microactuators. In relation to this, gallium arsenide (GaAs) offers a number of material-related properties and technological advantages over Si. These include well know properties, such as direct band gap transition and high electron mobility. A very important feature of GaAs is the possibility of forming compatible ternary and quaternary compounds by alloying. Using GaAs as a substrate material, formation of AlxGa1-xAs is especially attractive, since their lattice constants are nearly equal, and aluminum and gallium atoms are easily substituted in the lattice without causing too much strain in the film. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility two-dimensional carrier gases, resonant tunneling, and fractional quantum Hall effect, have been found in the GaAs heterostructure system (en)
- Silicon based MicroElectroMechanical Systems are now well understood and widely used in various integrated micromachined microsensors and microactuators. In relation to this, gallium arsenide (GaAs) offers a number of material-related properties and technological advantages over Si. These include well know properties, such as direct band gap transition and high electron mobility. A very important feature of GaAs is the possibility of forming compatible ternary and quaternary compounds by alloying. Using GaAs as a substrate material, formation of AlxGa1-xAs is especially attractive, since their lattice constants are nearly equal, and aluminum and gallium atoms are easily substituted in the lattice without causing too much strain in the film. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility two-dimensional carrier gases, resonant tunneling, and fractional quantum Hall effect, have been found in the GaAs heterostructure system (cs)
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| Title
| - GaAs Thermally Based MEMS Devices - Fabrication Techniques, Characterization and Modeling
- Tepelně izolovaná GaAs MEMS mikrostruktura (cs)
- GaAs Thermally Based MEMS Devices - Fabrication Techniques, Characterization and Modeling (en)
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| skos:prefLabel
| - GaAs Thermally Based MEMS Devices - Fabrication Techniques, Characterization and Modeling
- Tepelně izolovaná GaAs MEMS mikrostruktura (cs)
- GaAs Thermally Based MEMS Devices - Fabrication Techniques, Characterization and Modeling (en)
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| skos:notation
| - RIV/68407700:21230/06:03128374!RIV08-MSM-21230___
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| http://linked.open.../vavai/riv/strany
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| http://linked.open...avai/riv/aktivita
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| http://linked.open...avai/riv/aktivity
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| http://linked.open...vai/riv/dodaniDat
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| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
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| http://linked.open...iv/duvernostUdaju
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| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
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| http://linked.open...ai/riv/idVysledku
| - RIV/68407700:21230/06:03128374
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| http://linked.open...riv/jazykVysledku
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| http://linked.open.../riv/klicovaSlova
| - Characterization; GaAs; MEMS; Modeling (en)
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| http://linked.open.../riv/klicoveSlovo
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/mistoVydani
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| http://linked.open...i/riv/nazevZdroje
| - MEMS/NEMS Handbook - Techniques and Applications
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| http://linked.open...in/vavai/riv/obor
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| http://linked.open...ichTvurcuVysledku
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| http://linked.open...cetTvurcuVysledku
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| http://linked.open...UplatneniVysledku
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| http://linked.open...iv/tvurceVysledku
| - Husák, Miroslav
- Jakovenko, Jiří
- Drzik, M. D.
- Lalinsky, T. L.
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| http://linked.open...n/vavai/riv/zamer
| |
| number of pages
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| http://purl.org/ne...btex#hasPublisher
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| https://schema.org/isbn
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| http://localhost/t...ganizacniJednotka
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| is http://linked.open...avai/riv/vysledek
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