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  • In the paper, the influence of carrier lifetime inhomogeneous distribution on device characteristics is discussed. Further, monitoring methods measuring carrier lifetime distribution both in starting single crystal material and in device structures after high-temperature processes and technological tools for the structure homogenisation are also discussed.
  • In the paper, the influence of carrier lifetime inhomogeneous distribution on device characteristics is discussed. Further, monitoring methods measuring carrier lifetime distribution both in starting single crystal material and in device structures after high-temperature processes and technological tools for the structure homogenisation are also discussed. (en)
  • Je diskutován vliv nerovnoměrného rozložení rekombinačních center ve velkoplošných polovodičových strukturách na charakteristiky a parametry součástek. Dále jsou jsou diskutovány technologické nástroje pro dosažení homogenního rozložení doby života v součástkách (cs)
Title
  • A Note on Non-Uniform Distribution of the Carrier Lifetime in Large-Area Devices
  • A Note on Non-Uniform Distribution of the Carrier Lifetime in Large-Area Devices (en)
  • Problematika nehomogenního rozložení doby života nosičů ve velkoplošných součástkách (cs)
skos:prefLabel
  • A Note on Non-Uniform Distribution of the Carrier Lifetime in Large-Area Devices
  • A Note on Non-Uniform Distribution of the Carrier Lifetime in Large-Area Devices (en)
  • Problematika nehomogenního rozložení doby života nosičů ve velkoplošných součástkách (cs)
skos:notation
  • RIV/68407700:21230/06:03121720!RIV07-MSM-21230___
http://linked.open.../vavai/riv/strany
  • 1113 ; 1116
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  • Z(MSM6840770017)
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  • 463708
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  • RIV/68407700:21230/06:03121720
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  • Carrier Lifetime; Device Uniformity; Reliability (en)
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  • [75A680F15AB6]
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  • Shanghai
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  • Piscataway
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  • ICSICT - 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
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  • Benda, Vítězslav
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number of pages
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  • IEEE
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  • 1-4244-0160-7
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  • 21230
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