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  • The existence of the non-destructive breakdown was observed at some measurements of reverse current-voltage characteristics of individual diodes. However, the study of this phenomenon is very dificult for many in series connected diodes in stack.
  • The existence of the non-destructive breakdown was observed at some measurements of reverse current-voltage characteristics of individual diodes. However, the study of this phenomenon is very dificult for many in series connected diodes in stack. (en)
Title
  • Transient Effects on High Voltage Diode Stack under Reverse Bias
  • Transient Effects on High Voltage Diode Stack under Reverse Bias (en)
skos:prefLabel
  • Transient Effects on High Voltage Diode Stack under Reverse Bias
  • Transient Effects on High Voltage Diode Stack under Reverse Bias (en)
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  • RIV/68407700:21230/02:03084382!RIV/2003/GA0/212303/N
http://linked.open.../vavai/riv/strany
  • 181;187
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  • P(GA102/01/1353)
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  • 667271
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  • RIV/68407700:21230/02:03084382
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  • local breakdown; microplasma; silicon diode (en)
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  • [037033235E1D]
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  • Praha
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  • Proceedings of the 6th International Seminar on Power Semiconductors
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  • Papež, Václav
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  • České vysoké učení technické v Praze. Vydavatelství ČVUT
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  • 80-01-02595-0
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  • 21230
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