About: Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip     Goto   Sponge   NotDistinct   Permalink

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  • The need of a simulation of more complicated experiments performed on f.c.c based compound semiconductors call for a model with more active slip systems. Especially, the aim is to obtain the constitutive laws making it possible to describe the plastic behavior of GaAs crystals indented at room temperature. The present paper proposes a model inspired by the generalised constitutive laws for f.c.c. single crystals. The simulation of uniaxial compression tests performed on GaAs single crystals at medium temperatures is presented and the properties of the model are discussed
  • The need of a simulation of more complicated experiments performed on f.c.c based compound semiconductors call for a model with more active slip systems. Especially, the aim is to obtain the constitutive laws making it possible to describe the plastic behavior of GaAs crystals indented at room temperature. The present paper proposes a model inspired by the generalised constitutive laws for f.c.c. single crystals. The simulation of uniaxial compression tests performed on GaAs single crystals at medium temperatures is presented and the properties of the model are discussed (en)
Title
  • Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip
  • Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip (en)
skos:prefLabel
  • Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip
  • Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip (en)
skos:notation
  • RIV/68407700:21110/02:01078636!RIV/2003/GA0/211103/N
http://linked.open.../vavai/riv/strany
  • 22;23
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA106/00/1109), Z(MSM 210000021)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 653798
http://linked.open...ai/riv/idVysledku
  • RIV/68407700:21110/02:01078636
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductor (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [DE16BF2BDEB9]
http://linked.open...v/mistoKonaniAkce
  • Francheville
http://linked.open...i/riv/mistoVydani
  • Lyon
http://linked.open...i/riv/nazevZdroje
  • Abstracts: Colloque Plasticité 2002
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...ocetUcastnikuAkce
http://linked.open...nichUcastnikuAkce
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Kratochvíl, Jan
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • INSA de Lyon - URGC Géotechnique
http://localhost/t...ganizacniJednotka
  • 21110
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