About: Type-I InAs quantum dots covered by GaAsSb strain reducing layer     Goto   Sponge   NotDistinct   Permalink

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  • This work is focused on examining ultrafast photoluminescent properties of InAs QDs grown on GaAs substrate and covered by GaAs1-xSbx SRL. The aim is to understand the processes occurring inside the QDs and wetting layer and how the SRL influences the energy levels inside the QDs. Using upconversion method we measured luminescence dynamics of two samples with different concentration of Sb in the SRL with sub-picosecond time resolution. We investigated the effect of temperature, as well as the intensity and wavelength of the excitation pulse. We consequently derived recombination and relaxation processes occurring inside InAs QDs and also proved that the transport of charge carriers from the substrate and from the WL into the QDs is efficient.
  • This work is focused on examining ultrafast photoluminescent properties of InAs QDs grown on GaAs substrate and covered by GaAs1-xSbx SRL. The aim is to understand the processes occurring inside the QDs and wetting layer and how the SRL influences the energy levels inside the QDs. Using upconversion method we measured luminescence dynamics of two samples with different concentration of Sb in the SRL with sub-picosecond time resolution. We investigated the effect of temperature, as well as the intensity and wavelength of the excitation pulse. We consequently derived recombination and relaxation processes occurring inside InAs QDs and also proved that the transport of charge carriers from the substrate and from the WL into the QDs is efficient. (en)
Title
  • Type-I InAs quantum dots covered by GaAsSb strain reducing layer
  • Type-I InAs quantum dots covered by GaAsSb strain reducing layer (en)
skos:prefLabel
  • Type-I InAs quantum dots covered by GaAsSb strain reducing layer
  • Type-I InAs quantum dots covered by GaAsSb strain reducing layer (en)
skos:notation
  • RIV/68378271:_____/14:00439648!RIV15-AV0-68378271
http://linked.open...avai/riv/aktivita
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  • I
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 51576
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/14:00439648
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  • indium arsenide; quantum dots; gallium arsenide; luminescence; near infrared; telecommunications; upconversion (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [FC017419E979]
http://linked.open...v/mistoKonaniAkce
  • San Diego, CA
http://linked.open...i/riv/mistoVydani
  • Bellingham
http://linked.open...i/riv/nazevZdroje
  • Nanophotonic Materials XI
http://linked.open...in/vavai/riv/obor
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http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Pangrác, Jiří
  • Hospodková, Alice
  • Trojánek, F.
  • Kozák, M.
  • Pokorný, M.
http://linked.open...vavai/riv/typAkce
http://linked.open...ain/vavai/riv/wos
  • 000344107800015
http://linked.open.../riv/zahajeniAkce
issn
  • 0277-786X
number of pages
http://bibframe.org/vocab/doi
  • 10.1117/12.2061749
http://purl.org/ne...btex#hasPublisher
  • SPIE
https://schema.org/isbn
  • 978-1-62841-188-1
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