About: Achieving high-quality single-atom nitrogen doping of graphene/SiC(0001) by ion implantation and subsequent thermal stabilization

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About: Achieving high-quality single-atom nitrogen doping of graphene/SiC(0001) by ion implantation and subsequent thermal stabilization Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. We report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. (en)
Title	Achieving high-quality single-atom nitrogen doping of graphene/SiC(0001) by ion implantation and subsequent thermal stabilization Achieving high-quality single-atom nitrogen doping of graphene/SiC(0001) by ion implantation and subsequent thermal stabilization (en)
skos:prefLabel	Achieving high-quality single-atom nitrogen doping of graphene/SiC(0001) by ion implantation and subsequent thermal stabilization Achieving high-quality single-atom nitrogen doping of graphene/SiC(0001) by ion implantation and subsequent thermal stabilization (en)
skos:notation	RIV/68378271:_____/14:00436452!RIV15-GA0-68378271
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GA14-02079S), P(LG12003), P(LM2011029)
http://linked.open...iv/cisloPeriodika	7
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Kolorenč, Jindřich Jelínek, Pavel Švec, Martin Vondráček, Martin Ondráček, Martin Hapala, Prokop Mutombo, Pingo Telychko, Mykola
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	1445
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/14:00436452
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	graphene; doping; STM; DFT (en)
http://linked.open.../riv/klicoveSlovo	graphene DFT STM doping
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[55F6606779CD]
http://linked.open...i/riv/nazevZdroje	ACS Nano
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	8 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...vavai/riv/projekt	Materials science beamline at synchrotron Elettra in Trieste SAFMAT - Centre of Functional Materials Analyses Control of single electron charge states in molecules on surfaces
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	8
http://linked.open...iv/tvurceVysledku	Jelínek, Pavel Kolorenč, Jindřich Vondráček, Martin Švec, Martin Ondráček, Martin Hapala, Prokop Mutombo, Pingo Bocquet, F. C. Telychko, Mykola
http://linked.open...ain/vavai/riv/wos	000339463100089
issn	1936-0851
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1021/nn502438k

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