About: Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen     Goto   Sponge   NotDistinct   Permalink

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  • We studied the processes of hole and electron trapping in yttrium orthosilicate Y2SiO5 single crystals using continuous wave and pulse electron spin resonance methods. We show that holes created by x-ray irradiation at low temperatures (T <80 K) are preferably self-trapped at Si-unbound oxygen ions in the form of O- centers. Under irradiation at higher temperatures (200–290 K), the holes are trapped at the Si-unbound oxygen ions in the vicinity of perturbing defects such as yttrium vacancies and impurity ions forming a variety of O- centers with thermal stability up to room and higher temperatures. We have also found that under x-ray irradiation at T < 60 K, electrons are preferably trapped in the vicinity of Si-unbound oxygen ion vacancies and partly trapped also at Mo impurity ions in the form of F+-type and Mo5+ centers, respectively.
  • We studied the processes of hole and electron trapping in yttrium orthosilicate Y2SiO5 single crystals using continuous wave and pulse electron spin resonance methods. We show that holes created by x-ray irradiation at low temperatures (T <80 K) are preferably self-trapped at Si-unbound oxygen ions in the form of O- centers. Under irradiation at higher temperatures (200–290 K), the holes are trapped at the Si-unbound oxygen ions in the vicinity of perturbing defects such as yttrium vacancies and impurity ions forming a variety of O- centers with thermal stability up to room and higher temperatures. We have also found that under x-ray irradiation at T < 60 K, electrons are preferably trapped in the vicinity of Si-unbound oxygen ion vacancies and partly trapped also at Mo impurity ions in the form of F+-type and Mo5+ centers, respectively. (en)
Title
  • Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen
  • Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen (en)
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  • Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen
  • Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen (en)
skos:notation
  • RIV/68378271:_____/14:00432629!RIV15-GA0-68378271
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  • I, P(GAP204/12/0805), P(LM2011029)
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  • 6
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  • 14167
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  • RIV/68378271:_____/14:00432629
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  • ESR; yttrium orthosilicates; ESEEM; charge traps; F+ centers (en)
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  • US - Spojené státy americké
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  • [3BD44A88238D]
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  • Physical Review. B
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  • 90
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  • McClellan, K. J.
  • Nikl, Martin
  • Stanek, C. R.
  • Hybler, Jiří
  • Laguta, Valentyn
  • Rosa, Jan
  • Zazubovich, S.
  • Kärner, T.
  • Savchenko, Dariia
  • Buryi, Maksym
http://linked.open...ain/vavai/riv/wos
  • 000339994200003
issn
  • 1098-0121
number of pages
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  • 10.1103/PhysRevB.90.064104
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